Abstract: A method of controlling chemical mechanical polishing includes polishing a substrate having a plurality of protrusions, monitoring the substrate during polishing with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor, and detecting breakage of the protrusions based on the signal.

Abstract: A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects.