Patents by Inventor Xiongfei Yu

Xiongfei Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190197826
    Abstract: An interactive application processing method is described. A selection of an online interactive activity by a user is received in an interactive application. The online interactive activity is associated with an offline interactive activity. According to a past performance result, a determination is made, by circuitry of an interactive application apparatus, as to whether the user qualifies to participate in the offline interactive activity. When the user is determined to qualify to participate in the offline interactive activity, identity information of the user is acquired. A certificate is generated based on the identity information for allowing the user to participate in the offline interactive activity.
    Type: Application
    Filed: March 5, 2019
    Publication date: June 27, 2019
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Yong FAN, Zhiqiang HE, Jing ZHOU, Wuming YIN, Caiming FU, Xuan YU, Mingang HUANG, Yi LIU, Xiaohui CHEN, Xiaohui ZHENG, Ran DING, Xiejuan LIAO, Kan LIAO, Yancen LIN, Xiongfei WU, Ming HAN, Yuan YUAN, Xin ZHANG, Qingxin CHEN, Sheng HUANG, Yihua JIN, Yu CHEN
  • Patent number: 8188550
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: May 29, 2012
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Lieyong Yang, Siau Ben Chiah, Ming Lei, Hua Xiao, Xiongfei Yu, Kelvin Tianpeng Guan, Puay San Chia, Chor Shu Cheng, Gary Chia, Chee Kong Leong, Sean Lian, Kin San Pey, Chao Yong Li
  • Publication number: 20090166758
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Application
    Filed: September 30, 2008
    Publication date: July 2, 2009
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
    Inventors: Lieyong YANG, Siau Ben CHIAH, Ming LEI, Hua XIAO, Xiongfei YU, Kelvin Tianpeng GUAN, Puay San CHIA, Chor Shu CHENG, Gary CHIA, Chee Kong LEONG, Sean LIAN, Kin San PEY, Chao Yong LI