Patents by Inventor Xiongfei Yu

Xiongfei Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11968983
    Abstract: The present disclosure discloses a tobacco leaf foliar spraying substance for reducing harmful ingredients in cheroot, a method for reducing carcinogenic components in flue-cured tobacco leaves and flue-cured tobacco shreds. The tobacco leaf foliar spraying substance contains a lotus leaf extract, the harmful chemical ingredients comprise N-nitrosonornicotine, 4-(N-methyl-nitrosamine)-1-(3-pyridinyl)-1-butanone, N-nitrosoanabasine and N-nitrosoanatabine. Foliar spraying is performed on a fertile field by using the lotus leaf extract before tobacco leaves are harvested and modulated, which not only significantly promotesagronomic characters and economic traits of tobacco and alleviates tobacco leaf browning but also effectively reduces harmful chemical ingredients unique to tobacco leaves, such as nitrosamine and nicotine.
    Type: Grant
    Filed: June 17, 2023
    Date of Patent: April 30, 2024
    Assignee: HUBEI INSTITUTE OF TOBACCO SCIENCE
    Inventors: Chunlei Yang, Jinpeng Yang, Jun Zhou, Mei Yang, Yong Yang, Jun Yu, Zongping Li, Xiongfei Rao, Guangjiong Qin, Baoming Qiao, Ruoshi Bai, Yanjun Ma, Xianbao Deng, Wenzhang Qin, Kaixiao Fan, Candong Deng, Yongle Wei, Youlun Fan
  • Patent number: 8188550
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: May 29, 2012
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Lieyong Yang, Siau Ben Chiah, Ming Lei, Hua Xiao, Xiongfei Yu, Kelvin Tianpeng Guan, Puay San Chia, Chor Shu Cheng, Gary Chia, Chee Kong Leong, Sean Lian, Kin San Pey, Chao Yong Li
  • Publication number: 20090166758
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Application
    Filed: September 30, 2008
    Publication date: July 2, 2009
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
    Inventors: Lieyong YANG, Siau Ben CHIAH, Ming LEI, Hua XIAO, Xiongfei YU, Kelvin Tianpeng GUAN, Puay San CHIA, Chor Shu CHENG, Gary CHIA, Chee Kong LEONG, Sean LIAN, Kin San PEY, Chao Yong LI