Patents by Inventor Xiongkun YANG

Xiongkun YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming metal silicide
    Patent number: 10096691
    Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: October 9, 2018
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Qingzhu Zhang, Lichuan Zhao, Xiongkun Yang, Huaxiang Yin, Jiang Yan, Junfeng Li, Tao Yang, Jinbiao Liu
  • METHODS FOR FORMING METAL SILICIDE
    Publication number: 20160268391
    Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.
    Type: Application
    Filed: July 29, 2015
    Publication date: September 15, 2016
    Inventors: Qingzhu ZHANG, Lichuan ZHAO, Xiongkun YANG, Huaxiang YIN, Jiang YAN, Junfeng LI, Tao YANG, Jinbiao LIU