Abstract: A method, apparatus, device and storage medium for verifying a real store, which belong to the field of data processing. The method includes: acquiring inputted store information of a first store (S101); searching for, based on the store name and the store address of the first store, a first target store name in a first target area in an electronic map (102) searching for, based on the store address of the first store, a real store address database, and the store name of the first store, a second target store name in a second target area in the electronic map (S103) determining, under a condition that the first target store name or the second target store name exists, that the first store is a real store (S104).

Abstract: A method, apparatus, device and storage medium for verifying a real store, which belong to the field of data processing. The method includes: acquiring inputted store information of a first store (S101); searching for, based on the store name and the store address of the first store, a first target store name in a first target area in an electronic map (102) searching for, based on the store address of the first store, a real store address database, and the store name of the first store, a second target store name in a second target area in the electronic map (S103) determining, under a condition that the first target store name or the second target store name exists, that the first store is a real store (S104).

Abstract: In a method for fabricating a semiconductor device, a stack of alternating insulating layers and sacrificial layers are formed over a substrate. A staircase having a plurality of steps are formed in the stack, where each of the plurality of steps has a tread and a riser and further includes a respective pair of the insulating layer and the sacrificial layer over the insulating layer of the respective step. A dielectric layer is formed along the treads and risers of the plurality of steps. The dielectric layer is doped with one or a combination of carbon, phosphorous, boron, arsenic, and oxygen. The sacrificial layers are further replaced with a conductive material to form word line layers that are arranged between the insulating layers. A plurality of word line contacts are formed to extend from the word line layers of the plurality of steps, and further extend through the dielectric layer.