Patents by Inventor Xiucui WANG

Xiucui WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12288725
    Abstract: The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD?) values, according to relative error between CD? and CD, dividing the rebuilt critical dimension (CD?) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: April 29, 2025
    Assignee: SHANGHAI IC R&D CENTER CO., LTD.
    Inventors: Xueru Yu, Hongxia Sun, Chen Li, Pengfei Wang, Jiebin Duan, Xiucui Wang, Hao Fu, Tao Zhou, Yan Yan, Bowen Xu, Lingyi Guo, Liren Li
  • Publication number: 20220399237
    Abstract: The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD?) values, according to relative error between CD? and CD, dividing the rebuilt critical dimension (CD?) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results.
    Type: Application
    Filed: July 23, 2020
    Publication date: December 15, 2022
    Inventors: Xueru YU, Hongxia SUN, Chen LI, Pengfei WANG, Jiebin DUAN, Xiucui WANG, Hao FU, Tao ZHOU, Yan YAN, Bowen XU, Lingyi GUO, Liren LI