Abstract: Provided are a spin logic device based on a magnetic tunnel junction and an electronic apparatus comprising the same. According to an embodiment, the spin logic device may comprise: a current wiring; a magnetic tunnel junction, which comprises a free magnetic layer, a fixed magnetic layer, and a potential barrier layer located therebetween, which are stacked on the current wiring; and a current source for providing an input current to the current wiring, wherein the input current comprises a first, a second, and a third in-plane currents, directions of which are different from a direction of a magnetization axis of the free magnetic layer or there is a vertical component in that direction, and the first and the second in-plane currents are logical input currents while the third in-plane current is used to control the implementation mode of the spin logic device.

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Abstract: The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.

Abstract: The present disclosure provides a ride-hailing method and apparatus, an electronic device and a readable storage medium, and relates to the field of artificial intelligence technologies such as intelligent transportation and deep learning. The ride-hailing method includes: acquiring a rapid ride-hailing request, the rapid ride-hailing request including a departure position and a destination position of a user; determining a target pick-up point according to the departure position and the destination position; obtaining an arrival time from the departure position to the target pick-up point; and outputting the target pick-up point and path planning information from the departure position to the target pick-up point when a target region where the target pick-up point is located is determined as an easy ride-hailing region according to the arrival time. According to the present disclosure, users' ride-hailing time can be reduced, and the users' ride-hailing efficiency can be improved.

Abstract: Provided are a map data processing method and apparatus, and a storage medium, which relate to the field of data processing technology and, in particular, to artificial intelligence technology, for example, computer vision, map technology, and intelligent transportation. A specific implementation solution includes: processing landform coverage data according to a type of surface species coverage and a data processing rule associated with the type of surface species coverage to obtain a surface species coverage effect map; and generating a landform map according to the surface species coverage effect map and a reference map.

Abstract: The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.

Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Abstract: The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.

Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.

Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

Abstract: The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.

Abstract: The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero.

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.

Abstract: A magnetic multilayer film for a temperature sensor is disclosed. The magnetic multilayer film comprises: a bottom magnetic composite layer provided on a substrate, the bottom magnetic composite layer having a direct pinning structure, an indirect pinning structure, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structure; a spacer layer provided on the bottom magnetic composite layer; and a top magnetic composite layer provided on the spacer layer, the top magnetic composite layer having the direct pinning structure, the indirect pinning structure, the synthetic ferromagnetic structure, or the synthetic anti-ferromagnetic structure, wherein a ferromagnetic layer of the bottom magnetic composite layer closest to the spacer layer has a magnetic moment anti-parallel with that of a ferromagnetic layer of the top magnetic composite layer closest to the spacer layer.

Abstract: A magnetic multilayer film for a temperature sensor is disclosed. The magnetic multilayer film comprises: a bottom magnetic composite layer provided on a substrate, the bottom magnetic composite layer having a direct pinning structure, an indirect pinning structure, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structure; a spacer layer provided on the bottom magnetic composite layer; and a top magnetic composite layer provided on the spacer layer, the top magnetic composite layer having the direct pinning structure, the indirect pinning structure, the synthetic ferromagnetic structure, or the synthetic anti-ferromagnetic structure, wherein a ferromagnetic layer of the bottom magnetic composite layer closest to the spacer layer has a magnetic moment anti-parallel with that of a ferromagnetic layer of the top magnetic composite layer closest to the spacer layer.