Patents by Inventor Xiuguo CHEN
Xiuguo CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11662197Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.Type: GrantFiled: July 15, 2019Date of Patent: May 30, 2023Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Shiyuan Liu, Simin Zhu, Baokun Song, Hao Jiang, Xiuguo Chen
-
Patent number: 11644413Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.Type: GrantFiled: May 15, 2020Date of Patent: May 9, 2023Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Baokun Song, Shiyuan Liu, Zhengfeng Guo, Mingsheng Fang, Hao Jiang, Xiuguo Chen
-
Patent number: 11619883Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.Type: GrantFiled: August 19, 2021Date of Patent: April 4, 2023Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Xiuguo Chen, Shiyuan Liu
-
Publication number: 20220350261Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.Type: ApplicationFiled: August 19, 2021Publication date: November 3, 2022Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Xiuguo Chen, Shiyuan Liu
-
Patent number: 11143804Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.Type: GrantFiled: October 16, 2018Date of Patent: October 12, 2021Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Shiyuan Liu, Xiuguo Chen, Hao Jiang, Chuanwei Zhang
-
Publication number: 20210262922Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti. Then, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured. The obtained result is comprehensive and reliable, which is suitable for solving dielectric tensors of various materials.Type: ApplicationFiled: May 15, 2020Publication date: August 26, 2021Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang GU, Baokun SONG, Shiyuan LIU, Zhengfeng GUO, Mingsheng FANG, Hao JIANG, Xiuguo CHEN
-
Patent number: 10983007Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transiType: GrantFiled: July 25, 2019Date of Patent: April 20, 2021Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Baokun Song, Shiyuan Liu, Mingsheng Fang, Xiuguo Chen, Hao Jiang
-
Publication number: 20200333132Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.Type: ApplicationFiled: July 15, 2019Publication date: October 22, 2020Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Shiyuan Liu, Simin Zhu, Baokun Song, Hao Jiang, Xiuguo Chen
-
Publication number: 20200333188Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transiType: ApplicationFiled: July 25, 2019Publication date: October 22, 2020Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang Gu, Baokun Song, Shiyuan Liu, Mingsheng Fang, Xiuguo Chen, Hao Jiang
-
Patent number: 10739251Abstract: The present invention discloses a high temporal resolution Mueller matrix elliptical polarization measuring device and method. In the incident light path, four polarization modulation channels are used to split and modulate a pulse laser beam into four polarized beams in independent polarization states. Due to different light path differences, the pulse beams have a time interval of several nanoseconds, and thus four pulse laser beams are successively irradiated on the surface of the sample. In the reflected light path, six channel polarization detection modules are used to synchronously measure the Stokes vectors of the reflected beams on the sample surface. By using known incident and reflected Stokes vectors of the four pulse beams, linear equations can be solved to obtain the Mueller matrix of the sample.Type: GrantFiled: September 10, 2018Date of Patent: August 11, 2020Assignee: Huazhong University of Science and TechnologyInventors: Hao Jiang, Jiamin Liu, Shiyuan Liu, Song Zhang, Zhicheng Zhong, Xiuguo Chen, Honggang Gu
-
Publication number: 20190369006Abstract: The present invention discloses a high temporal resolution Mueller matrix elliptical polarization measuring device and method. In the incident light path, four polarization modulation channels are used to split and modulate a pulse laser beam into four polarized beams in independent polarization states. Due to different light path differences, the pulse beams have a time interval of several nanoseconds, and thus four pulse laser beams are successively irradiated on the surface of the sample. In the reflected light path, six channel polarization detection modules are used to synchronously measure the Stokes vectors of the reflected beams on the sample surface. By using known incident and reflected Stokes vectors of the four pulse beams, linear equations can be solved to obtain the Mueller matrix of the sample.Type: ApplicationFiled: September 10, 2018Publication date: December 5, 2019Inventors: Hao JIANG, Jiamin LIU, Shiyuan LIU, Song ZHANG, Zhicheng ZHONG, Xiuguo CHEN, Honggang GU
-
Publication number: 20190361161Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.Type: ApplicationFiled: October 16, 2018Publication date: November 28, 2019Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Honggang GU, Shiyuan LIU, Xiuguo CHEN, Hao JIANG, Chuanwei ZHANG
-
Patent number: 10345568Abstract: A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.Type: GrantFiled: April 13, 2017Date of Patent: July 9, 2019Assignee: WUHAN EOPTICS TECHNOLOGY CO., LTD.Inventors: Xiuguo Chen, Jun Chen, Chao Chen, Shiyuan Liu
-
Publication number: 20180164566Abstract: A Mueller-matrix microscope, including: a polarizing unit and an analyzing unit. The polarizing unit is configured to modulate a light beam emitted from an external light source module to yield a polarized light beam, and then to project the polarized light beam on the surface of a sample to be measured. The analyzing unit is configured to analyze the polarization state of a light beam reflected from the surface of the sample, to acquire information of the sample. The analyzing unit includes a polarization state analyzer (PSA) and a backside reflection suppression (BRS) unit. The PSA unit is configured to demodulate the polarization state of the light beam; and the BRS unit is configured to suppress the backside reflections from transparent substrate.Type: ApplicationFiled: April 13, 2017Publication date: June 14, 2018Inventors: Xiuguo CHEN, Jun CHEN, Chao CHEN, Shiyuan LIU
-
Patent number: 9103667Abstract: An alignment method for optical axes of a composite waveplate includes rotating a rotatable waveplate, which rotates about a central axis with respect to a fixed waveplate, and adjusting the rotation angle thereof until the differences between the spectral parameters of the composite waveplate and ideal spectral parameters are smaller than preset values.Type: GrantFiled: July 25, 2014Date of Patent: August 11, 2015Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Shiyuan Liu, Honggang Gu, Xiuguo Chen, Chuanwei Zhang, Weiqi Li, Weichao Du
-
Patent number: 9070091Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.Type: GrantFiled: January 31, 2013Date of Patent: June 30, 2015Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Shiyuan Liu, Jinlong Zhu, Chuanwei Zhang, Xiuguo Chen
-
Publication number: 20150029507Abstract: An alignment method for optical axes of a composite waveplate includes rotating a rotatable waveplate, which rotates about a central axis with respect to a fixed waveplate, and adjusting the rotation angle thereof until the differences between the spectral parameters of the composite waveplate and ideal spectral parameters are smaller than preset values.Type: ApplicationFiled: July 25, 2014Publication date: January 29, 2015Inventors: Shiyuan LIU, Honggang GU, Xiuguo CHEN, Chuanwei ZHANG, Weiqi LI, Weichao DU
-
Publication number: 20130325760Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.Type: ApplicationFiled: January 31, 2013Publication date: December 5, 2013Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Shiyuan LIU, Jinlong ZHU, Chuanwei ZHANG, Xiuguo CHEN
-
Patent number: D976599Type: GrantFiled: May 23, 2021Date of Patent: January 31, 2023Assignees: HUIZHOU HONORFAITH FURNITURE CO., LTD., DONGGUAN ONENOE FURNITURE CO., LTD.Inventors: Yuxian Cao, Yuxuan Cao, Jia Li, Xianglong Lei, Degui Xie, Ligang Lu, Libin Han, Peisheng Li, Zepeng Tang, Yan Xu, Xiuguo Chen, Lijun Lei