Abstract: The present invention discloses a multiphase ceramic material with a giant dielectric constant, wherein the multiphase ceramic material has a general formula of AxBnxTi1?(n+1)xO2; wherein A is at least one selected from the group consisting of Nb, Ta, V, Mo, and Sb, B is at least one selected from the group consisting of In, Ga, Al, Co, Cr, Sc, Fe (III), and a trivalent rare-earth cation; n is a molar ratio of B to A, 1<n?5 , 0<x?0.1. The multiphase ceramic material possesses outstanding properties including a giant dielectric constant, a low dielectric loss, and excellent frequency- and temperature-stability. In particular, it exhibits a high insulation resistivity of higher than 1011 ?·cm and a high breakdown voltage, which implies it can be applied in high-energy storage devices and supercapacitors. This invention also provides a method to synthesize the multiphase ceramic material.

Abstract: An LTCC microwave dielectric material, including the following components: a Ba5Si8O21+(1?a) (MgxCaySrzBa1-x-y-z)WO4+Ba—B—Si glass; wherein 0.4?a?0.8, 0?x?1, 0?y?1, 0?z?1. By adjusting the amounts of Ba5Si8O21 and (MgxCaySrzBa1-x-y-z)WO4, the temperature coefficient of resonance frequency can be adjusted to nearly zero. The material is suitable for the fields of high-frequency communication and radiofrequency. Also disclosed is a method for preparing the LTCC microwave dielectric material.

Abstract: Disclosed is a low temperature co-fired dielectric material with an adjustable dielectric constant, wherein it comprises a zirconia main phase and a silicon-based amorphous filler, a weight ratio of the zirconia main phase to the silicon-based amorphous filler is 40-65: 35-60; a weight percentage of SiO2. in the silicon-based amorphous filler is ?50%. The dielectric constant of low temperature co-fired dielectric material can be continuously adjusted in a wide range of 7-12, the dielectric loss can be as low as 0.1% at 1 MHz. The material system can be sintered at 800-900° C. and co-fired with silver electrode. It can be used as the low temperature co-fired dielectric material. The invention also discloses a method for preparing the low temperature co-fired dielectric material with an adjustable dielectric constant.

Abstract: Disclosed herein is a doped perovskite barium stannate material, which has a chemical general formula of BaAxBxSn1-2xO3, where A is at least one of In, Y, Bi and La; B is at least one of Nb and Ta, and 0<x?0.025. The doped perovskite barium stannate material disclosed in the invention has a high dielectric constant, low dielectric loss and good temperature-stability, and it can be used not only as low-frequency ceramic capacitor dielectrics, but also as microwave dielectric ceramics because of its excellent microwave dielectric properties, implying the potential application in the field of microwave communication. What's more, disclosed is a method to prepare the doped perovskite barium stannate material and the application of the doped perovskite barium stannate material in a low-frequency ceramic capacitor or microwave communication dielectric ceramics.