Patents by Inventor Xiuhua PAN
Xiuhua PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230152315Abstract: Disclosed is a kit for testing a COVID-19 antigen. The kit includes a test card, a conjugate pad and a reaction pad being arranged on the test card; wherein the conjugate pad is provided with a labeled antibody Ab1 and a labeled antibody Ab3 of the COVID-19 antigen, and a quality control line and a test line are arranged in parallel with an interval on the reaction pad, the test line being provided with a coating antibody Ab2, and the quality control line being provided with a coating antibody Ab4. With the kit, by the AIE immunofluorescence chromatographic technique, the AIE fluorescent microspheres are used as labels, and the test result of the test card is directly determined and read by using a fluorescent flashlight, or the test result is read by using a fluorescent tester. Such kits have the advantages of high sensitivity, strong specificity and simple operation.Type: ApplicationFiled: April 15, 2022Publication date: May 18, 2023Inventors: Xiwen Jiang, Wenchuang Qi, Shuang Liu, Xiuhua Pan, Songkang Su, Hong Xu
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Publication number: 20230072850Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that incrementally increases and then decrementally decreases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: April 12, 2021Publication date: March 9, 2023Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220375876Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from wide to narrow with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.Type: ApplicationFiled: April 12, 2021Publication date: November 24, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328678Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328674Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has an element ratio of the first group III element to the second group III element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328672Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from narrow to wide with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.Type: ApplicationFiled: July 20, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328677Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. An oscillation rate in the concentration of the first element per unit thickness of the buffer layer varies with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.Type: ApplicationFiled: July 20, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328675Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is greater than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.Type: ApplicationFiled: July 20, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328673Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has a variable concentration of the second group III element that incrementally increases and then decrementally decreases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328425Abstract: A semiconductor device includes a nucleation layer, a first buffer layer, a first nitride-based semiconductor layer, and a second buffer layer. The nucleation layer includes a compound which includes a first element. The first buffer layer includes a III-V compound which includes the first element. A concentration of the first element varies with respect to a first reference point within the first buffer layer. The first nitride-based semiconductor layer is disposed on the first buffer layer. The second buffer layer includes a III-V compound which includes a second element different than the first element. The second buffer layer is disposed on and forms an interface with the first nitride-based semiconductor layer. A concentration of the second element varies to cyclically oscillate as a function of a distance within a thickness of the second buffer layer, which occurs with respect to a second reference point within the second buffer layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328680Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element cyclically oscillating with respect to first and second reference points within a buffer layer. The first and second reference points are respectively positioned at first and second distances from a top surface of the nucleation layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328424Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has an element ratio of the first group III element to the second group III element that incrementally increases and then decrementally decreases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328676Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is less than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.Type: ApplicationFiled: July 20, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
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Publication number: 20220328679Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.Type: ApplicationFiled: July 26, 2021Publication date: October 13, 2022Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN