Abstract: The present invention is a ZnO whisker film, a manufacturing method thereof and an electronic device material composed of such a ZnO whisker film, the film is composed of primarily (at least 50 mol %) of ZnO crystals, and of accumulated whisker-like particles having an aspect ratio of 2 or more, and the film has a nanostructure with both a high specific surface area and a high electrical conductivity, the film can be manufactured by adjusting one or more solution condition selected from starting material concentration, temperature and pH so as to induce the deposition of ZnO crystals, in a reaction solution system for depositing zinc oxide, and forming thereby a ZnO whisker film on a substrate.