Abstract: A semiconductor device and a method of fabricating the device are disclosed. The method of forming a metal layer includes: placing a substrate in a sputtering chamber; forming a first metal sub-layer on the substrate by performing a magnetron sputtering process; and forming a second metal sub-layer on the first metal sub-layer by performing another magnetron sputtering process and concurrently introducing a heated gas stream in the sputtering chamber, wherein the first metal sub-layer and the second metal sub-layer together constitute the metal layer and are each formed of aluminum doped with copper. The metal layer resulting from this method contains uniformly-sized small crystal grains separated from one another by minimal gaps between their grain boundaries. This imparts to the metal layer high surface flatness with fewer undesired bumps and hence good appearance, resulting in an increase in its yield.

Abstract: A semiconductor device and a method of fabricating the device are disclosed. The method of forming a metal layer includes: placing a substrate in a sputtering chamber; forming a first metal sub-layer on the substrate by performing a magnetron sputtering process; and forming a second metal sub-layer on the first metal sub-layer by performing another magnetron sputtering process and concurrently introducing a heated gas stream in the sputtering chamber, wherein the first metal sub-layer and the second metal sub-layer together constitute the metal layer and are each formed of aluminum doped with copper. The metal layer resulting from this method contains uniformly-sized small crystal grains separated from one another by minimal gaps between their grain boundaries. This imparts to the metal layer high surface flatness with fewer undesired bumps and hence good appearance, resulting in an increase in its yield.