Patents by Inventor Xiuling WEI

Xiuling WEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-dropout linear regulator with super transconductance structure
    Patent number: 10019023
    Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: July 10, 2018
    Assignee: University of Electronic Science and Technology of China
    Inventors: Xin Ming, Di Gao, Jiahao Zhang, Xuan Zhang, Xiuling Wei, Yao Wang, Zhuo Wang, Bo Zhang
  • Low-Dropout Linear Regulator with Super Transconductance Structure
    Publication number: 20180157283
    Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.
    Type: Application
    Filed: August 30, 2017
    Publication date: June 7, 2018
    Applicant: University of Electronic Science and Technology of China
    Inventors: Xin MING, Di GAO, Jiahao ZHANG, Xuan ZHANG, Xiuling WEI, Yao WANG, Zhuo WANG, Bo ZHANG