Patents by Inventor Xiulong Wu
Xiulong Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11929111Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module, arranged to read data in a memory cell; and a control module, electrically connected to the amplification module. In a first offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first inverter and a second inverter, and each of the first inverter and the second inverter is an inverter an input terminal and an output terminal connected to each other; and in a second offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a current mirror structure.Type: GrantFiled: September 10, 2021Date of Patent: March 12, 2024Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Zhiting Lin, Guanglei Wen, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Xiulong Wu, Junning Chen
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Patent number: 11929716Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.Type: GrantFiled: September 13, 2021Date of Patent: March 12, 2024Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Xiulong Wu, Li Zhao, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Zhiting Lin, Junning Chen
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Patent number: 11929112Abstract: The sense amplifier includes: an amplification module configured to amplify a voltage transmitted by a bit line or a reference bit line, when the sense amplifier is at an amplification stage; a first switch module configured to control the amplification module to be disconnected from the reference bit line, when the sense amplifier performs a read operation for the bit line and is at the amplification stage. In the disclosure, the power consumption of the sense amplifier may be reduced.Type: GrantFiled: September 13, 2021Date of Patent: March 12, 2024Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Chunyu Peng, Zijian Wang, Wenjuan Lu, Xiulong Wu, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Zhiting Lin, Junning Chen
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Patent number: 11894047Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.Type: GrantFiled: December 25, 2020Date of Patent: February 6, 2024Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., ANHUI UNIVERSITYInventors: Chunyu Peng, Yangkuo Zhao, Wenjuan Lu, Xiulong Wu, Zhiting Lin, Junning Chen, Xin Li, Rumin Ji, Jun He, Zhan Ying
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Patent number: 11887655Abstract: A sense amplifier includes an amplification module and a control module electrically connected to the amplification module. Herein, in a case of reading a data in a memory cell on a first bit line, at an offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first diode structure, a first current mirror structure, and a first inverter with an input terminal and an output terminal connected to each other. In a case of reading a data in a memory cell on a second bit line, at the offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a second diode structure, a second current mirror structure, and a second inverter with an input terminal and an output terminal connected to each other.Type: GrantFiled: September 14, 2021Date of Patent: January 30, 2024Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Wenjuan Lu, Junlin Ge, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Chunyu Peng, Zhiting Lin, Xiulong Wu, Junning Chen
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Patent number: 11869624Abstract: A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.Type: GrantFiled: September 13, 2021Date of Patent: January 9, 2024Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., ANHUI UNIVERSITYInventors: Wenjuan Lu, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Chunyu Peng, Xiulong Wu, Zhiting Lin, Junning Chen
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Patent number: 11862285Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module configured to read data in a storage unit on a first or second bit line; a control module electrically connected to the amplification module. When data in the storage unit on the first bit line is read, in a first amplification phase of the sense amplifier, the control module configures the amplification module to include a first current mirror structure and connects a mirror terminal of the first current mirror structure to the second bit line; when data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module configures the amplification module to include a second current mirror structure and connects a mirror terminal of the second current mirror structure to the first bit line.Type: GrantFiled: September 14, 2021Date of Patent: January 2, 2024Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Zhiting Lin, Jianqing Li, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Xiulong Wu, Junning Chen
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Publication number: 20230058436Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.Type: ApplicationFiled: December 25, 2020Publication date: February 23, 2023Inventors: Chunyu PENG, Yangkuo ZHAO, Wenjuan LU, Xiulong WU, Zhiting LIN, Junning CHEN, Xin LI, Rumin JI, Jun HE, Zhan YING
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Patent number: 11423957Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.Type: GrantFiled: December 25, 2020Date of Patent: August 23, 2022Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Chunyu Peng, Junlin Ge, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Zhiting Lin, Xiulong Wu, Junning Chen
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Publication number: 20220208235Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.Type: ApplicationFiled: December 25, 2020Publication date: June 30, 2022Inventors: Chunyu PENG, Junlin GE, Jun HE, Zhan YING, Xin LI, Kanyu CAO, Wenjuan LU, Zhiting LIN, Xiulong WU, Junning CHEN
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Patent number: 11315610Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module, configured to read data in a storage unit on a bit line or a storage unit on a reference bit line; and a first switch module, configured to control the amplification module to be disconnected from the reference bit line when the sense amplifier reads a first state for the bit line and the sense amplifier is in an amplification stage, and control the amplification module to be connected to the reference bit line when the sense amplifier reads a second state for the bit line and the sense amplifier is in the amplification stage. The present disclosure can reduce the power consumption of the sense amplifier.Type: GrantFiled: December 25, 2020Date of Patent: April 26, 2022Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., ANHUI UNIVERSITYInventors: Chunyu Peng, Zijian Wang, Wenjuan Lu, Xiulong Wu, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Zhiting Lin, Junning Chen
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Publication number: 20220068357Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module, arranged to read data in a memory cell; and a control module, electrically connected to the amplification module. In a first offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first inverter and a second inverter, and each of the first inverter and the second inverter is an inverter an input terminal and an output terminal connected to each other; and in a second offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a current mirror structure.Type: ApplicationFiled: September 10, 2021Publication date: March 3, 2022Inventors: Zhiting LIN, Guanglei Wen, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Xiulong Wu, Junning Chen
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Publication number: 20220068323Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module configured to read data in a storage unit on a first or second bit line; a control module electrically connected to the amplification module. When data in the storage unit on the first bit line is read, in a first amplification phase of the sense amplifier, the control module configures the amplification module to include a first current mirror structure and connects a mirror terminal of the first current mirror structure to the second bit line; when data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module configures the amplification module to include a second current mirror structure and connects a mirror terminal of the second current mirror structure to the first bit line.Type: ApplicationFiled: September 14, 2021Publication date: March 3, 2022Inventors: Zhiting Lin, Jianqing Li, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Xiulong Wu, Junning Chen
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Publication number: 20220051713Abstract: A sense amplifier includes an amplification module and a control module electrically connected to the amplification module. Herein, in a case of reading a data in a memory cell on a first bit line, at an offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first diode structure, a first current mirror structure, and a first inverter with an input terminal and an output terminal connected to each other. In a case of reading a data in a memory cell on a second bit line, at the offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a second diode structure, a second current mirror structure, and a second inverter with an input terminal and an output terminal connected to each other.Type: ApplicationFiled: September 14, 2021Publication date: February 17, 2022Inventors: Wenjuan LU, Junlin GE, Jun HE, Zhan YING, Xin LI, Kanyu CAO, Chunyu PENG, Zhiting LIN, Xiulong WU, Junning CHEN
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Publication number: 20220029586Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.Type: ApplicationFiled: September 13, 2021Publication date: January 27, 2022Inventors: Xiulong WU, Li ZHAO, Yangkuo ZHAO, Jun HE, Xin LI, Zhan YING, Kanyu CAO, Wenjuan LU, Chunyu PENG, Zhiting LIN, Junning CHEN
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Publication number: 20220028436Abstract: A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.Type: ApplicationFiled: September 13, 2021Publication date: January 27, 2022Inventors: Wenjuan Lu, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Chunyu Peng, Xiulong Wu, Zhiting Lin, Junning Chen
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Publication number: 20220028446Abstract: The sense amplifier includes: an amplification module configured to amplify a voltage transmitted by a bit line or a reference bit line, when the sense amplifier is at an amplification stage; a first switch module configured to control the amplification module to be disconnected from the reference bit line, when the sense amplifier performs a read operation for the bit line and is at the amplification stage. In the disclosure, the power consumption of the sense amplifier may be reduced.Type: ApplicationFiled: September 13, 2021Publication date: January 27, 2022Inventors: Chunyu PENG, Zijian Wang, Wenjuan Lu, Xiulong Wu, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Zhiting Lin, Junning Chen