Abstract: A preparation method of a high-thermal-conductivity and net-size silicon nitride ceramic substrate includes the following steps: (1) mixing an original powder, a sintering aid, a dispersant, a defoamer, a binder, and a plasticizer in a protective atmosphere to allow vacuum degassing to obtain a mixed slurry; (2) subjecting the mixed slurry to tape casting and drying in a nitrogen atmosphere to obtain a first green body; (3) subjecting the first green body to shaping pretreatment to obtain a second green body; (4) subjecting the second green body to debonding at 500° C. to 900° C. to obtain a third green body; and (5) subjecting the third green body to gas pressure sintering in a nitrogen atmosphere at 1,800° C. to 2,000° C. to obtain the high-thermal-conductivity and net-size silicon nitride ceramic substrate.

Abstract: A computer readable storage medium is provided. When contents of the computer readable storage medium are executed by a processor, multi-photon imaging may be performed on a histopathological section containing tumor environment information, and pathological partitioning of a tumor microenvironment may be further performed through image processing. A value of each collagen feature parameters, such as a morphological feature parameter, an energy feature parameter and a texture feature parameter, may be extracted from a tumor tissue region, an invasive margin (IM) region and a normal tissue (N) region. An inter-region difference and a variation may be calculated according to feature parameters of regions. A collagen feature scoring model may be established. A collagen feature score may be calculated with the collagen feature parameters input to the model.

Abstract: The present disclosure relates to a method for preparing a silicon nitride ceramic material. The method including: (1) with at least one of silicon powder and silicon nitride powder as original powder and Y2O3 powder and MgO powder as sintering aids, the original powder and the sintering aids are mixed in a protective atmosphere, and the mixture is formed into a green body; (2) the resulting green body is put into a reducing atmosphere and pretreated at 500° C. to 800° C. to obtain a biscuit; and the reducing atmosphere is a hydrogen/nitrogen mixed atmosphere with a hydrogen content not higher than 5%; (3) the resulting biscuit is put into a nitrogen atmosphere and subjected to low-temperature heat treatment at 1600° C. to 1800° C. and high-temperature heat treatment at 1800° C. to 2000° C. in sequence.

Abstract: A preparation method for a copper plate-covered silicon nitride ceramic substrate is provided. The structure of the copper plate-covered silicon nitride ceramic substrate includes a silicon nitride ceramic substrate, copper sheets disposed on the upper and lower sides of the silicon nitride ceramic substrate and soldering layers disposed between the copper sheets and the silicon nitride ceramic substrate; the composition of the silicon nitride ceramic substrate comprises a silicon nitride phase (more than or equal to 95 wt %); and a grain boundary phase (containing at least three elements (Y, Mg and O) and less than or equal to 5 wt %, and the content of a crystalline phase in the grain boundary phase is more than or equal to 40 vol %); and the sintering aids are Y2O3 and MgO. The two-step sintering process comprises: in a nitrogen atmosphere, performing low-temperature heat treatment and high-temperature heat treatment in sequence.

Abstract: The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.

Abstract: A toilet cover plate includes a cover plate body, including a channel and a body recess disposed on a top surface of the cover plate body and connected with the channel. The toilet cover plate also includes a flip cover disposed on the cover plate body and pivotally mounted in the body recess. When the flip cover is in an initial state, the flip cover is received in the body recess and covers an opening of the channel. The toilet cover plate also includes a holding mechanism disposed between the flip cover and the cover plate body and configured to keep the flip cover received in the body recess.

Abstract: The present disclosure includes a configuration of a polarization control system and an algorithm that realize fast polarization controlling and tracking while avoiding the Glitch problems (i.e., loss of polarization tracking). The polarization controller includes multiple stages along with tunable orientation and retardation angles. The retardation angles are initialized to at least two different values for better polarization tracking in normal mode. In a normal mode, only the orientation angles of the polarization controller are dithered. When the monitored error is higher than the threshold, the polarization controller enters a glitch mode, and Glitch detection can be improved through error signal data processing. In the Glitch mode, at least one retardation angle is dithered along with the orientation angles.

Abstract: The present disclosure includes a configuration of a polarization control system and an algorithm that realize fast polarization controlling and tracking while avoiding the Glitch problems (i.e., loss of polarization tracking). The polarization controller includes multiple stages along with tunable orientation and retardation angles. The retardation angles are initialized to at least two different values for better polarization tracking in normal mode. In a normal mode, only the orientation angles of the polarization controller are dithered. When the monitored error is higher than the threshold, the polarization controller enters a glitch mode, and Glitch detection can be improved through error signal data processing. In the Glitch mode, at least one retardation angle is dithered along with the orientation angles.

Abstract: The present invention provides an X-ray radiography apparatus constructed so as to be capable of moving an X-ray generator to as low a position as possible. A X-ray radiography apparatus is of the X-ray radiography apparatus that includes a table which has a transverse direction and a longitudinal direction, and which includes a first X-ray detector and is capable of placing a subject thereon, an X-ray generator that applies X rays to the subject placed on the table, and an X-ray generator moving device that moves the X-ray generator in the longitudinal direction of the table and upward and downward directions thereof.

Abstract: The present invention provides an X-ray radiography apparatus constructed so as to be capable of moving an X-ray generator to as low a position as possible. A X-ray radiography apparatus is of the X-ray radiography apparatus that includes a table which has a transverse direction and a longitudinal direction, and which includes a first X-ray detector and is capable of placing a subject thereon, an X-ray generator that applies X rays to the subject placed on the table, and an X-ray generator moving device that moves the X-ray generator in the longitudinal direction of the table and upward and downward directions thereof.