Abstract: In one aspect, a preparation method for a bifacial solar cell utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present disclosure, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of —SiH connected to mono-hydrogen atoms, a lower number of SiH2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.

Abstract: In one aspect, a method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including first and second doped regions, and a P-type doping concentration of the first doped region being greater than that of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The disclosed method can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current such that the solar cell has higher conversion efficiency.

Abstract: In the preparation process for a passivated contact battery, preparation of a back surface field passivation structure thereof comprises: growing a tunneling oxide layer on a back surface of a silicon wafer; growing an intrinsic silicon carbide layer on a surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on a surface of the intrinsic silicon carbide layer; and performing annealing, so as to cause the silicon carbide and the phosphorus in the phosphorus-doped silicon carbide layer to form covalent bonds. The passivated contact battery can be obtained by means of the described preparation process, and same comprises a silicon wafer as well as a tunneling oxide layer, an intrinsic silicon carbide layer, and a phosphorus-doped silicon carbide layer which are sequentially stacked on a back surface of the silicon wafer.

Abstract: In one aspect, a preparation method for a solar cell includes: forming a target amorphous silicon layer on a side of a silicon wafer using a preset process, and then performing an annealing treatment on the target amorphous silicon layer to convert the target amorphous silicon layer into a target polycrystalline silicon layer, wherein the preset process includes at least one cycle period, the at least one cycle period comprises: depositing a target amorphous silicon preformed layer with a preset thickness and performing a hydrogen gas plasma treatment on the target amorphous silicon preformed layer, wherein the preset thickness of the target amorphous silicon preformed layer is less than or equal to a thickness of the target amorphous silicon layer. This method can effectively improve a crystallization rate of converting amorphous silicon into polycrystalline silicon, improving field passivation performance and contact performance of the solar cell.

Abstract: A silicon oxide layer is formed on the back surface of an N-type silicon wafer; an N-type silicon layer is formed on the silicon oxide layer, wherein the phosphine concentration of the N-type silicon layer is within a first preset concentration range; and an antireflection layer is formed on the N-type silicon layer and a back electrode is formed on the antireflection layer. In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.