Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and having holes; a first insulation layer disposed on the semiconductor epitaxial structure and having first and second grooves; a first pad electrically connected to the first semiconductor layer through the first grooves; and a second pad electrically connected to the second semiconductor layer through the second grooves. A projection of the first pad does not overlap projections of the holes. A projection of the second pad does not overlap the projections of the holes. The first pad includes a first pad connection portion and first pad extension portions; the second pad includes a second pad connection portion and second pad extension portions. Projections of the second grooves fall between projections of the first and second pad extension portions. Two other aspects of the light-emitting device are also provided.

Abstract: Disclosed is a light-emitting device which includes a light-emitting element and a wavelength conversion layer, and light of a first wavelength emitted by the light-emitting element is converted into light of a second wavelength and light of a third wavelength through the wavelength conversion layer. The light-emitting element includes a first contact layer, and the reflectivity of the first contact layer to the third wavelength is greater than 85%, so that the reflectivity of the light of the second wavelength and the light of the third wavelength converted by the wavelength conversion layer and reflected to the surface of the light-emitting element may be increased, and the white light conversion efficiency and the light extraction efficiency of the light-emitting device are improved.

Abstract: A light-emitting diode includes an epitaxial structure, at least one via hole, a first insulation layer, a first connecting electrode, a second connecting electrode, a second insulation layer, a first pad, and a second pad. The first insulation layer includes a first insulation portion and a second insulation portion such that an upper surface of the first connecting electrode and an upper surface of the second connecting electrode are disposed on the same level so as to ensure that an upper surface of the first pad and an upper surface of the second pad are also on the same level.

Abstract: A light emitting device includes a semiconductor structure and an insulating layer. The semiconductor structure has a mesa recess extending from a top surface of a second semiconductor layer to a top surface of a first semiconductor layer. The insulating layer covers the semiconductor structure and has an electrode passage hole on the top surface of the first semiconductor at the bottom of the mesa recess. The second semiconductor layer has a top boundary edge intersecting the boundary wall of the mesa recess above the electrode passage hole. A minimum distance from the electrode passage hole to the top boundary edge of the second semiconductor layer is no less than 1 ?m.

Abstract: A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective layer in the first opening is in contact with the first semiconductor layer, and located between the first semiconductor layer and the stress adjustment layer. The first metal reflective layer and the stress adjustment layer contain a same metal element, and a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A solid-state laser system includes a gain medium having an optical resonator defined therein. The gain medium is co-doped with first and second active elements. The first active element is Er3+ and the second active element is Ho3+ or Dy3+. The solid-state laser system also includes a pump source coupled to the gain medium for pumping the gain medium with pump light.

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: Mid-IR supercontinuum laser source in the 3-12 micron region generating at least tens of watts of optical power and based on non-silica optical fiber pumped by a ZBLAN fiber laser generating light at about 2.7 microns. The zero-dispersion wavelength of the non-silica fiber substantially coincides with the lasing wavelength. The proportion of the SC output above 3 microns exceeds 40 percent of the overall power output.

Abstract: Mid-IR supercontinuum laser source in the 3-12 micron region generating at least tens of watts of optical power and based on non-silica optical fiber pumped by a ZBLAN fiber laser generating light at about 2.7 microns. The zero-dispersion wavelength of the non-silica fiber substantially coincides with the lasing wavelength. The proportion of the SC output above 3 microns exceeds 40 percent of the overall power output.

Abstract: A first optical fiber (12) having a first end and a second end is connected to a multimode second optical fiber (14) at the second end. The first optical fiber (12) outputs a substantially single mode optical beam at its second end. The multimode second optical fiber (14) converts light in the optical beam of single mode from the first optical fiber to light of multiple modes, and provides an output beam that has less diffractive spreading than that of a Gaussian beam.

Abstract: A first optical fiber (12) having a first end and a second end is connected to a multimode second optical fiber (14) at the second end. The first optical fiber (12) outputs a substantially single mode optical beam at its second end. The multimode second optical fiber (14) converts light in the optical beam of single mode from the first optical fiber to light of multiple modes, and provides an output beam that has less diffractive spreading than that of a Gaussian beam.