Patents by Inventor Xiuwei TIAN

Xiuwei TIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On-wafer S-parameter calibration method
    Patent number: 11340286
    Abstract: The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.
    Type: Grant
    Filed: December 29, 2018
    Date of Patent: May 24, 2022
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
    Inventors: Aihua Wu, Chong Li, Chen Liu, Yibang Wang, Xingchang Fu, Faguo Liang, Xiuwei Tian, Yanan Liu, Jian Cao
  • NEW ON-WAFER S-PARAMETER CALIBRATION METHOD
    Publication number: 20220003811
    Abstract: The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.
    Type: Application
    Filed: December 29, 2018
    Publication date: January 6, 2022
    Inventors: Aihua WU, Chong LI, Chen LIU, Yibang WANG, Xingchang FU, Faguo LIANG, Xiuwei TIAN, Yanan LIU, Jian CAO