Patents by Inventor Xiuyong LIU

Xiuyong LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTERLAYER DIELECTRIC LAYER STRUCTURE FOR POWER MOS DEVICE AND METHOD FOR MAKING THE SAME
    Publication number: 20220028984
    Abstract: The present application relates to the field of semiconductor forming technologies, in particular to an interlayer dielectric layer structure for a power MOS device and a method for making the same. The interlayer dielectric layer structure for a power MOS device comprises a silicon-rich oxide SiOx film layer deposited on the surface of the power MOS device, wherein a silicon dioxide film layer is deposited on the silicon-rich oxide SiOx film layer. The method for forming an interlayer dielectric layer structure for a power MOS device comprises the following steps: depositing a silicon-rich oxide SiOx film layer on the surface of the power MOS device; and depositing a silicon dioxide film layer on the silicon-rich oxide SiOx film layer.
    Type: Application
    Filed: November 12, 2020
    Publication date: January 27, 2022
    Applicant: Hua Hong Semiconductor (Wuxi) Limited
    Inventors: Xiuyong LIU, Zhengrong CHEN, Changming WU, Jiliang ZHANG, Lipei JIN