Abstract: Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each surrounded by SiN spacers; forming an ILD surrounding the SiN spacers; planarizing the ILD, the metal gate stacks, and the SiN spacers; determining at least one desired threshold voltage for the p-type metal gate stack; forming a first cavity in the p-type metal gate stack for each desired threshold voltage and a second cavity in the n-type metal gate stack; selecting a first nitride layer for each first cavity, the first nitride layer for each cavity having a concentration of hydrogen reactive gas based on the desired threshold voltage associated with the cavity; forming the first nitride layers in the respective first cavities; and forming a second nitride layer, with a hydrogen rich reactive gas, in the second cavity.

Abstract: Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each surrounded by SiN spacers; forming an ILD surrounding the SiN spacers; planarizing the ILD, the metal gate stacks, and the SiN spacers; determining at least one desired threshold voltage for the p-type metal gate stack; forming a first cavity in the p-type metal gate stack for each desired threshold voltage and a second cavity in the n-type metal gate stack; selecting a first nitride layer for each first cavity, the first nitride layer for each cavity having a concentration of hydrogen reactive gas based on the desired threshold voltage associated with the cavity; forming the first nitride layers in the respective first cavities; and forming a second nitride layer, with a hydrogen rich reactive gas, in the second cavity.