Patents by Inventor Xiwei Bai

Xiwei Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10879358
    Abstract: A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: December 29, 2020
    Assignee: HRL Laboratories, LLC
    Inventors: Biqin Huang, Xiwei Bai
  • Publication number: 20200235211
    Abstract: A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.
    Type: Application
    Filed: March 20, 2020
    Publication date: July 23, 2020
    Applicant: HRL Laboratories, LLC
    Inventors: Biqin HUANG, Xiwei Bai
  • Patent number: 10636880
    Abstract: A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: April 28, 2020
    Assignee: HRL Laboratories, LLC
    Inventors: Biqin Huang, Xiwei Bai
  • Patent number: 10600961
    Abstract: A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: March 24, 2020
    Assignee: HRL Laboratories, LLC
    Inventors: Wei Yi, Kenneth K. Tsang, Stephen K. Lam, Xiwei Bai, Jack A. Crowell, Elias A. Flores
  • Publication number: 20190237546
    Abstract: A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.
    Type: Application
    Filed: November 21, 2018
    Publication date: August 1, 2019
    Applicant: HRL Laboratories, LLC
    Inventors: Biqin Huang, Xiwei Bai
  • Publication number: 20190036023
    Abstract: A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%.
    Type: Application
    Filed: June 11, 2018
    Publication date: January 31, 2019
    Inventors: Wei Yi, Kenneth K. Tsang, Stephen K. Lam, Xiwei Bai, Jack A. Crowell, Elias A. Flores