Abstract: A solar power generation component provided by the present disclosure includes a first substrate, a photoelectric transformation element, a reticular reflective layer and a second substrate deposed in sequence from top to bottom, the photoelectric transformation element includes a plurality of solar cell chips, the plurality of solar cell chips are disposed on the reticular reflective layer, and the adjacent solar cell chips define a gap, the reticular reflective layer includes a reticular frame located below the gaps among the plurality of solar cell chips.

Abstract: The present disclosure provides a thin film assembly and a method of preparing the same, and a hetero-junction cell including a thin film assembly. The thin film assembly comprises at least two transparent conductive oxide film layers superposed together, each of the at least two transparent conductive oxide film layers is an ITO film, the first ITO film layer is doped with a tin content of 10-15 wt %, and the second ITO film layer is doped with a tin content?5 wt % and <10 wt %.

Abstract: A solar cell sheet includes: a conductive connection member; and a first electrode, a first transparent conductive layer, a first doped layer of a first conductivity type, a first passivation layer, a monocrystalline silicon wafer, a second passivation layer, a second doped layer of a second conductivity type, a second transparent conductive layer, and a second electrode arranged in an order from top to bottom. One end of the conductive connection member is electrically connected to the first electrode, and the other end of the conductive connection member extends to a side of the second transparent conductive layer adjacent to the second electrode, and the conductive connection member is insulated from the second transparent conductive layer and the second electrode.

Abstract: A preparation method of a composite electrode on a solar cell is provided. The preparation method of the composite electrode includes the following steps of: depositing a metal contact layer on a cell chip; forming an electrode on the metal contact layer to obtain a composite electrode comprising a metal contact layer and an electrode. A composite electrode on the solar cell and the solar cell are also provided.

Abstract: A preparation method of a heterojunction solar cell is provided. The method includes the following steps of: sequentially forming an intrinsic layer, forming a doped silicon layer, forming a transparent conductive film layer, forming a metal thin layer and forming an electrode layer on at least one side of a crystalline silicon substrate. A heterojunction solar cell is also provided.

Abstract: A method for soldering hetero-junction with intrinsic thin layer solar cells together to form a string, includes soldering solar cells, and judging whether a temperature in a soldering chamber is within a preset temperature range every preset time; if the temperature is within the preset temperature range, continuing to solder; and if the temperature is beyond the preset temperature range, regulating the temperature in the soldering chamber to be within the preset temperature range, and continuing to solder the solar cells.

Abstract: A wafer supporting apparatus includes: a first fixed plate and a second fixed plate, a first upper fixing rod and a second upper fixing rod, and a lower fixing rod parallel to and below the first upper fixing rod and the second upper fixing rod. Two ends of the first upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the second upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the lower fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. The first upper fixing rod and the second upper fixing rod are each provided with a plurality of limiting columns each of which including a cylindrical body and a semispherical end.

Abstract: The present disclosure discloses a solar power generation apparatus, including: at least two substrates, two adjacent substrates being in flexible connection; and a solar cell chip. Each of the substrates is provided with the solar cell chip. The flexible connection indicates that two adjacent substrates can rotate within a scope of 0-360 degrees, such that the at least two substrates in flexible connection have a plurality of states including a tiled state, a folding state, and states ranging from an unfolding state to the folding state.

Abstract: The present invention discloses a preparation method of a heterojunction solar cell and the heterojunction solar cell. The method comprises: providing a substrate; respectively depositing intrinsic layers at two sides of the substrate; respectively depositing n-type doped layers and p-type doped layers on the intrinsic layers at two sides of the substrate, wherein at least two n-type doped layers and/or p-type doped layers are provided, and the doping concentration of each layer of the n-type doped layers and/or the p-type doped layers is gradually increased in a longitudinal direction away from the substrate; and respectively and sequentially forming transparent conductive oxide layers and electrode layers on the n-type doped layers and the p-type doped layers. Therefore, the conversion and production efficiencies of the cell are increased.

Abstract: A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm?3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.

Abstract: A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.

Abstract: A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.

Abstract: Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.

Abstract: High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

Abstract: The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.