Patents by Inventor XiXiang Xu

XiXiang Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303578
    Abstract: A solar power generation component provided by the present disclosure includes a first substrate, a photoelectric transformation element, a reticular reflective layer and a second substrate deposed in sequence from top to bottom, the photoelectric transformation element includes a plurality of solar cell chips, the plurality of solar cell chips are disposed on the reticular reflective layer, and the adjacent solar cell chips define a gap, the reticular reflective layer includes a reticular frame located below the gaps among the plurality of solar cell chips.
    Type: Application
    Filed: July 17, 2017
    Publication date: September 24, 2020
    Inventors: Jun DUAN, Chengjian HONG, Dezheng HU, Yuanmin LI, Xixiang XU
  • Publication number: 20190198698
    Abstract: The present disclosure provides a thin film assembly and a method of preparing the same, and a hetero-junction cell including a thin film assembly. The thin film assembly comprises at least two transparent conductive oxide film layers superposed together, each of the at least two transparent conductive oxide film layers is an ITO film, the first ITO film layer is doped with a tin content of 10-15 wt %, and the second ITO film layer is doped with a tin content?5 wt % and <10 wt %.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 27, 2019
    Inventors: GE CUI, YONGCAI HE, CAO YU, JINYAN ZHANG, XIXIANG XU
  • Publication number: 20190172963
    Abstract: A solar cell sheet includes: a conductive connection member; and a first electrode, a first transparent conductive layer, a first doped layer of a first conductivity type, a first passivation layer, a monocrystalline silicon wafer, a second passivation layer, a second doped layer of a second conductivity type, a second transparent conductive layer, and a second electrode arranged in an order from top to bottom. One end of the conductive connection member is electrically connected to the first electrode, and the other end of the conductive connection member extends to a side of the second transparent conductive layer adjacent to the second electrode, and the conductive connection member is insulated from the second transparent conductive layer and the second electrode.
    Type: Application
    Filed: September 25, 2018
    Publication date: June 6, 2019
    Applicant: Beijing Juntai Innovation Technology Co., Ltd.
    Inventors: Cao Yu, Miao Yang, Xixiang Xu
  • Publication number: 20190148582
    Abstract: A preparation method of a composite electrode on a solar cell is provided. The preparation method of the composite electrode includes the following steps of: depositing a metal contact layer on a cell chip; forming an electrode on the metal contact layer to obtain a composite electrode comprising a metal contact layer and an electrode. A composite electrode on the solar cell and the solar cell are also provided.
    Type: Application
    Filed: June 28, 2018
    Publication date: May 16, 2019
    Inventors: Miao Yang, Cao Yu, Xixiang Xu
  • Publication number: 20190148579
    Abstract: A preparation method of a heterojunction solar cell is provided. The method includes the following steps of: sequentially forming an intrinsic layer, forming a doped silicon layer, forming a transparent conductive film layer, forming a metal thin layer and forming an electrode layer on at least one side of a crystalline silicon substrate. A heterojunction solar cell is also provided.
    Type: Application
    Filed: September 6, 2018
    Publication date: May 16, 2019
    Inventors: Jin Wang, Fuguo Peng, Dezheng Hu, Xixiang Xu, Yuanmin Li
  • Publication number: 20190058079
    Abstract: A method for soldering hetero-junction with intrinsic thin layer solar cells together to form a string, includes soldering solar cells, and judging whether a temperature in a soldering chamber is within a preset temperature range every preset time; if the temperature is within the preset temperature range, continuing to solder; and if the temperature is beyond the preset temperature range, regulating the temperature in the soldering chamber to be within the preset temperature range, and continuing to solder the solar cells.
    Type: Application
    Filed: August 16, 2018
    Publication date: February 21, 2019
    Applicant: Beijing Juntai Innovation Technology Co., Ltd.
    Inventors: Qi Guo, Dezheng Hu, Jinyan Zhang, Xixiang Xu, Yuanmin Li
  • Publication number: 20190019916
    Abstract: A wafer supporting apparatus includes: a first fixed plate and a second fixed plate, a first upper fixing rod and a second upper fixing rod, and a lower fixing rod parallel to and below the first upper fixing rod and the second upper fixing rod. Two ends of the first upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the second upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the lower fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. The first upper fixing rod and the second upper fixing rod are each provided with a plurality of limiting columns each of which including a cylindrical body and a semispherical end.
    Type: Application
    Filed: July 12, 2018
    Publication date: January 17, 2019
    Inventors: Yongdeng LONG, Xiangang CHEN, Miao YANG, Cao YU, Jinyan ZHANG, Xixiang XU
  • Publication number: 20180358479
    Abstract: The present disclosure discloses a solar power generation apparatus, including: at least two substrates, two adjacent substrates being in flexible connection; and a solar cell chip. Each of the substrates is provided with the solar cell chip. The flexible connection indicates that two adjacent substrates can rotate within a scope of 0-360 degrees, such that the at least two substrates in flexible connection have a plurality of states including a tiled state, a folding state, and states ranging from an unfolding state to the folding state.
    Type: Application
    Filed: August 5, 2018
    Publication date: December 13, 2018
    Applicant: Beijing Juntai Innovation Technology Co., Ltd.
    Inventors: Xiuqing YANG, Fuguo PENG, Dezheng HU, Xixiang XU, Yuanmin LI
  • Publication number: 20180342641
    Abstract: The present invention discloses a preparation method of a heterojunction solar cell and the heterojunction solar cell. The method comprises: providing a substrate; respectively depositing intrinsic layers at two sides of the substrate; respectively depositing n-type doped layers and p-type doped layers on the intrinsic layers at two sides of the substrate, wherein at least two n-type doped layers and/or p-type doped layers are provided, and the doping concentration of each layer of the n-type doped layers and/or the p-type doped layers is gradually increased in a longitudinal direction away from the substrate; and respectively and sequentially forming transparent conductive oxide layers and electrode layers on the n-type doped layers and the p-type doped layers. Therefore, the conversion and production efficiencies of the cell are increased.
    Type: Application
    Filed: May 25, 2018
    Publication date: November 29, 2018
    Applicant: Beijing Juntai Innovation Technology Co., Ltd.
    Inventors: Xiangang CHEN, Miao YANG, Cao YU, Jinyan ZHANG, Xixiang XU
  • Publication number: 20100116338
    Abstract: A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm?3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 13, 2010
    Applicant: United Solar Ovinic LLC
    Inventors: Xixiang Xu, Subhendu Guha, Chi Yang
  • Publication number: 20100117172
    Abstract: A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 13, 2010
    Applicant: United Solar Ovonic LLC
    Inventors: Baojie Yan, Xixiang Xu, Guozhen Yue, Subhendu Guha, Chi Yang
  • Publication number: 20100116334
    Abstract: A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 13, 2010
    Applicant: United Solar Ovonic LLC
    Inventors: Xixiang Xu, David Alan Beglau, Guozhen Yue, Baojie Yan, Yang Li, Scott Jones, Subhendu Guha, Chi Yang
  • Patent number: 5346853
    Abstract: Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.
    Type: Grant
    Filed: January 21, 1994
    Date of Patent: September 13, 1994
    Assignee: United Solar Systems Corporation
    Inventors: Subhendu Guha, Chi C. Yang, XiXiang Xu
  • Patent number: 5334423
    Abstract: High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.
    Type: Grant
    Filed: January 28, 1993
    Date of Patent: August 2, 1994
    Assignee: United Solar Systems Corp.
    Inventors: Subhendu Guha, Chi C. Yang, XiXiang Xu
  • Patent number: 5231048
    Abstract: The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: July 27, 1993
    Assignee: United Solar Systems Corporation
    Inventors: Subhendu Guha, Arindam Banerjee, Chi C. Yang, XiXiang Xu