Abstract: An apparatus for treating municipal sewage by anaerobic/aerobic/anoxic (AOA) [1] process via simultaneous endogenous partial [2] denitrification coupled with anammox in anoxic zone is disclosed. The apparatus mainly includes a raw water tank (1) for sewage, an AOA reactor (2) and a sedimentation tank (3), the sludge flows back from the bottom of the sedimentation tank (3) to the anoxic zone (2.4) and the anaerobic zone (2.2) respectively, and biofilm filler is added to the anoxic zone (2.4). The sewage enters the AOA reactor (2), and the intracellular carbon source is stored in the anaerobic zone (2.2) to remove the organic matter in the raw water. Then it enters the aerobic zone (2.3) for nitrification, and the generated nitrate-nitrogen enters the anoxic zone (2.4) for endogenous partial denitrification. The filler in the anoxic zone (2.4) uses the generated nitrite-nitrogen by endogenous partial denitrification and the remaining ammonia-nitrogen in the raw water to perform anammox reaction.

Abstract: An apparatus for treating municipal sewage by anaerobic/aerobic/anoxic (AOA) [1] process via simultaneous endogenous partial [2] denitrification coupled with anammox in anoxic zone is disclosed. The apparatus mainly includes a raw water tank (1) for sewage, an AOA reactor (2) and a sedimentation tank (3), the sludge flows back from the bottom of the sedimentation tank (3) to the anoxic zone (2.4) and the anaerobic zone (2.2) respectively, and biofilm filler is added to the anoxic zone (2.4). The sewage enters the AOA reactor (2), and the intracellular carbon source is stored in the anaerobic zone (2.2) to remove the organic matter in the raw water. Then it enters the aerobic zone (2.3) for nitrification, and the generated nitrate-nitrogen enters the anoxic zone (2.4) for endogenous partial denitrification. The filler in the anoxic zone (2.4) uses the generated nitrite-nitrogen by endogenous partial denitrification and the remaining ammonia-nitrogen in the raw water to perform anammox reaction.

Abstract: An array substrate of a fringe field switching (FFS) mode liquid crystal display (LCD) panel and manufacturing method thereof are provided. The gate electrodes and the common electrode of the FFS mode LCD panel are formed on the array substrate by the same photolithographic process, and the common electrode, the gate lines and the gate electrodes are disposed on the same layer. The passivation layer of the FFS mode LCD panel is formed on the pixel electrodes. The passivation layer has a plurality of first openings, and each of the first openings at least partially exposes the pixel electrodes.

Abstract: An array substrate of a fringe field switching (FFS) mode liquid crystal display (LCD) panel and manufacturing method thereof are provided. The gate electrodes and the common electrode of the FFS mode LCD panel are formed on the array substrate by the same photolithographic process, and the common electrode, the gate lines and the gate electrodes are disposed on the same layer. The passivation layer of the FFS mode LCD panel is formed on the pixel electrodes. The passivation layer has a plurality of first openings, and each of the first openings at least partially exposes the pixel electrodes.

Abstract: A pixel structure includes a scan line, a data line, a gate electrode electrically connected to the scan line, a semiconductor layer disposed on the gate electrode, a drain electrode, an extending electrode, and a pixel electrode. The scan line and the data line cross each other, and are insulated. The drain electrode includes a contact part disposed outside the gate electrode, an electrode part disposed on the semiconductor pattern and a connecting part extending from the contact part along a direction to connect the electrode part, and partially overlapping the gate electrode. The pixel electrode is connected to the contact part. The extending electrode is connected to the scan line. A first end of the extending electrode points to the semiconductor layer along the direction, and overlaps the drain electrode. A first width of the connecting part is equal to the second width of the extending electrode.

Abstract: A pixel structure includes a scan line, a data line, a gate electrode electrically connected to the scan line, a semiconductor layer disposed on the gate electrode, a drain electrode, an extending electrode, and a pixel electrode. The scan line and the data line cross each other, and are insulated. The drain electrode includes a contact part disposed outside the gate electrode, an electrode part disposed on the semiconductor pattern and a connecting part extending from the contact part along a direction to connect the electrode part, and partially overlapping the gate electrode. The pixel electrode is connected to the contact part. The extending electrode is connected to the scan line. A first end of the extending electrode points to the semiconductor layer along the direction, and overlaps the drain electrode. A first width of the connecting part is equal to the second width of the extending electrode.