Abstract: A sintering furnace can have a housing, one or more heating elements, and a conveying assembly. Each heating element can be disposed within the housing and can subject a heating zone to a thermal shock temperature profile. A substrate with one or more precursors thereon can be moved by the conveying assembly through an inlet of the housing to the heating zone, where it is subjected to a first temperature of at least 500° C. for a first time period. The conveying assembly can then move the substrate with one or more sintered materials thereon from the heating zone and through an outlet of the housing.

Abstract: A vapor deposition system can have a support member, a baffle member, and a deposition substrate. The support member can hold a batch of solid-state precursors. The baffle member can be disposed over and spaced from the support member to define a confined heating volume with at least one exit window. The deposition substrate can be disposed over and spaced from the baffle member. The batch of solid-state precursors can be subjected to a temperature greater than 2200, so as to convert at least some of the solid-state precursors into a vapor that exits the confined heating volume via the at least one exit window, flows around the baffle member, and solidifies on the deposition substrate surface. In some embodiments, the baffle member can comprise a heating element. Alternatively or additionally, the vapor deposition system can have a separate heating system.

Abstract: A sintering furnace can have a housing, one or more heating elements, and a conveying assembly. Each heating element can be disposed within the housing and can subject a heating zone to a thermal shock temperature profile. A substrate with one or more precursors thereon can be moved by the conveying assembly through an inlet of the housing to the heating zone, where it is subjected to a first temperature of at least 500° C. for a first time period. The conveying assembly can then move the substrate with one or more sintered materials thereon from the heating zone and through an outlet of the housing.

Abstract: Degraded electrode material from a used battery can be recycled by subjecting to a thermal shock. The degraded electrode material can have impurities resulting from charge/discharge cycling of the battery. The thermal shock can have a temperature of at least 1000 K for a time period of 10 seconds or less, for example, less than or equal to 1 second. The thermal shock can also include a heating rate of at least 103 K/second preceding the time period and a cooling rate of at least 103 K/second following the time period. The subjecting to the thermal shock regenerate the electrode material, for example, by removing impurities from the electrode material and/or replenishing metal ions within the electrode material.

Abstract: A sintering furnace can have a housing, one or more heating elements, and a conveying assembly. Each heating element can be disposed within the housing and can subject a heating zone to a thermal shock temperature profile. A substrate with one or more precursors thereon can be moved by the conveying assembly through an inlet of the housing to the heating zone, where it is subjected to a first temperature of at least 500° C. for a first time period. The conveying assembly can then move the substrate with one or more sintered materials thereon from the heating zone and through an outlet of the housing.

Abstract: A method for yield improvement of trench MOS barrier Schottky (TMBS) devices includes: forming a plurality of trenches in a substrate; forming a gate dielectric layer over a surface of the substrate and inner surfaces of the trenches; forming gates in the trenches; forming a first barrier dielectric layer, a second barrier dielectric layer and an intermediate dielectric layer over the trenches; etching the intermediate dielectric layer with the second barrier dielectric layer serving as an etch stop layer to form a window for forming contact holes; etching a portion of the second barrier dielectric layer within the window using the first barrier dielectric layer as an etch stop layer; and etching in the window to remove a portion of the first barrier dielectric layer overlying the gates and a portion of the gate dielectric layer overlying the substrate.

Abstract: A method for yield improvement of trench MOS barrier Schottky (TMBS) devices includes: forming a plurality of trenches in a substrate; forming a gate dielectric layer over a surface of the substrate and inner surfaces of the trenches; forming gates in the trenches; forming a first barrier dielectric layer, a second barrier dielectric layer and an intermediate dielectric layer over the trenches; etching the intermediate dielectric layer with the second barrier dielectric layer serving as an etch stop layer to form a window for forming contact holes; etching a portion of the second barrier dielectric layer within the window using the first barrier dielectric layer as an etch stop layer; and etching in the window to remove a portion of the first barrier dielectric layer overlying the gates and a portion of the gate dielectric layer overlying the substrate.