Abstract: This application provides an internal series battery, including a series module including three or more battery units, each including a positive active material layer, a solid electrolyte layer and a negative active material layer stacked, and intermediate current collectors, each disposed between the corresponding two adjacent battery units connected in series therethrough; a positive current collector located at one end of the series module and electrically connected to the positive active material layer of the battery unit at the end; and a negative current collector located at the other end of the series module and electrically connected to the negative active material layer of the battery unit at the end. The battery units include a first battery unit and a second battery unit that have an energy density the same as and different from any one of the battery units at the two ends of the series module respectively.

Abstract: A display panel includes a substrate, multiple scan lines, multiple data lines, and multiple pixel structures. The scan lines and the data lines are disposed on the substrate. The pixel structure is disposed on the substrate and electrically connected to the scan lines and the data lines, and includes an active device, a pixel electrode, a capacitor electrode, an overcoat layer, a first common electrode, a second common electrode, a first passivation layer, and a second passivation layer. The active device is electrically connected one scan line, one data line, and the pixel electrode. The capacitor electrode extends from a drain and is electrically connected to the pixel electrode. The overcoat layer is disposed between the pixel electrode and the capacitor electrode. The first common electrode overlaps the capacitor electrode, and is located between the overcoat layer and the capacitor electrode.

Abstract: The present application relates to a rotational joint and a device having the same. The rotational joint includes a joint housing, a driving device mounted in the joint housing, and an encoder module mounted on the driving device. The driving device includes inner shaft and an outer shaft surrounding the inner shaft and radially spaced apart from the inner shaft. The encoder module includes a first disk assembly configured to rotate synchronously with the outer shaft, a second disk assembly configured to rotate synchronously with the inner shaft, a first sensor assembly disposed adjacent to the first disk assembly to detect movement of a disk of the first disk assembly, and a second sensor assembly disposed adjacent to the second disk assembly to detect movement of a disk of the second disk assembly. A disk surface of the first disk assembly and a disk surface of the second disk assembly are arranged to be coplanar and radially spaced apart by at least a predetermined distance.

Abstract: A terminal can save power by utilizing preset conditions. For example, when a first preset condition is satisfied, a first carrier currently activated is switched to a power saving state. The first preset condition is satisfied for indicating a power saving operation to be performed.

Abstract: A wireless communication method is disclosed. The method comprises transmitting, by a wireless communication terminal to a wireless communication node, a wake-up request comprising wake-up information in one or more wake-up occasions to indicate the wireless communication node to perform one or more operations.

Abstract: A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Abstract: A wireless communication method is disclosed. The method comprises transmitting, by a wireless communication terminal to a wireless communication node, a wake-up request comprising wake-up information in one or more wake-up occasions, wherein the wake-up information comprises at least one of a cell activation request, a cell deactivation request, or a feedback information to the wireless communication node.

Abstract: A wireless communication method is disclosed. The method comprises: receiving, by a wireless communication terminal from a wireless communication node, indication information of one or more downlink, DL, signal transmissions, wherein the indication information indicates one or more transmission patterns for the one or more DL signal transmissions; and receiving, by the wireless communication terminal from the wireless communication node, one or more DL signals according to the one or more patterns for the one or more DL signal transmissions.

Abstract: This disclosure is directed to methods, systems, and devices related to wireless communication, and more specifically relates to saving network energy. A method of wireless communication, comprising: receiving, by a wireless communication device, from a network device, one or more of the following information: a first indication, a second indication, a third indication, a fourth indication or a fifth indication; wherein the first to fifth indication information include one or more of the following information: activations of a cell or a cell group, deactivation of the cell or the cell group, a cell state indication, a Bandwidth Part (BWP) indication, a BWP state indication, or a reference signal indication; and operating the wireless communication device according to the receiving.

Abstract: Methods, apparatus, system for wireless communication are described and include a method of wireless communication. A method of wireless communication, comprising receiving, by a communication device, an indication of a discontinuous transmission (DTX) operation by a network node; and operating the communication device according to the indication of the DTX operation.

Abstract: A display substrate and a display device relate to the technical field of displaying. The display substrate includes a plurality of display units spaced apart from each other and a plurality of connection units, the plurality of connection units being connected between two adjacent display units; the plurality of connection units include: two connection units arranged along a first direction, wherein the first direction is parallel to a stretching direction of the display substrate; wherein the two connection units arranged along the first direction are axisymmetric with respect to a first reference line, so that the plurality of connection units arranged along a second direction have a same deformation amount in a stretching state, the second direction is perpendicular to the stretching direction, and an extension direction of the first reference line is parallel to the second direction.

Abstract: A dual-medium TFB gasification incinerator and implementation method of a waste gasification incineration. The incinerator includes an incinerator body, a gas-solid separator, a waste heat recovery device, and an incinerator body support. The incinerator body includes a gasification section, a combustion section, and a heat exchange section that are all sequentially connected from bottom to top. The combustion section and the heat exchange section are indirectly connected. The incinerator body support includes at least one layer of transverse beam, which is located at a level higher than a connection part of the combustion section and faces the incinerator body. Each of the at least one layer of transverse beam is provided with a layer of support plate on a side close to the incinerator body. Each layer of support plate supports a first-stage of heat exchange furnace wall and heat conduction oil coil pipes provided on an inner surface of the first-stage.

Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.

Abstract: Techniques are described to enable a user equipment (UE) to save power consumption and/or can enable the UE to acquire the channel state in time without reducing the UE's data transmission efficiency. An example technique includes determining, by the communication device, an operating mode based on a first signaling, and operating the communication device in the operating mode, where the operating mode includes any one of a normal mode, a first power saving mode, a second power saving mode, a third power saving mode, or a fourth power saving mode.

Abstract: A photoelectric computing unit, a photoelectric computing array and a photoelectric computing method. The photoelectric computing unit includes a semiconductor multifunctional region structure, which includes at least one carrier control region, at least one coupling region, and at least one photon-generated carrier collection region and readout region.

Abstract: A data processor is for accessing a memory having a first pseudo channel and a second pseudo channel. The data processor includes at least one memory accessing agent, a memory controller, and a data fabric. The at least one memory accessing agent generates generating memory access requests including first memory access requests that access the memory. The memory controller provides memory commands to the memory in response to the first memory access requests. The data fabric routes the first memory access requests to a first downstream port in response to a corresponding first memory request accessing the first pseudo channel, and to a second downstream port in response to the corresponding first memory request accessing the second pseudo channel. The memory controller has first and second upstream ports coupled to the first and second downstream ports of the data fabric, respectively, and a downstream port coupled to the memory.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a silicon oxycarbonitride spacer, a silicon oxycarbide spacer, a silicon nitride spacer, and a source/drain structure. The gate structure is on the semiconductor substrate. The silicon oxycarbonitride spacer is on a sidewall of the gate structure. The silicon oxycarbide spacer is on a sidewall of the silicon oxycarbonitride spacer. The silicon nitride spacer is on a sidewall of the silicon oxycarbide spacer, in which an upper portion of the silicon nitride spacer has a lower density than a lower portion of the silicon nitride spacer. The source/drain structure is on the semiconductor substrate and adjacent to the gate structure.

Abstract: An edge assembly used for a plasma etching system is provided. The edge assembly includes: a focus ring peripherally surrounding an edge portion of a mounting platform mounted in the plasma etching system. The focus ring includes: a lower step portion proximate to the edge portion, the lower step portion extending vertically from a bottom surface of the focus ring to a lower step top surface; and an upper step portion distal to the edge portion, the upper step portion extending vertically from the bottom surface of the focus ring to an upper step top surface and extending radially from an upper step inner side to an upper step outer side. The focus ring is characterized by an air gap located in the upper step portion, and the air gap extends peripherally along a circumstance of the focus ring.