Patents by Inventor Xuan-Feng Lu

Xuan-Feng Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of redistribution circuit structure
    Patent number: 7648902
    Abstract: A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: January 19, 2010
    Assignee: ChipMOS Technologies (Bermuda) Ltd.
    Inventor: Xuan-Feng Lu
  • MANUFACTURING METHOD OF REDISTRIBUTION CIRCUIT STRUCTURE
    Publication number: 20090130839
    Abstract: A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask.
    Type: Application
    Filed: January 12, 2009
    Publication date: May 21, 2009
    Applicant: CHIPMOS TECHNOLOGIES (BERMUDA) LTD.
    Inventor: Xuan-Feng Lu
  • Redistribution circuit structure
    Patent number: 7498251
    Abstract: A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: March 3, 2009
    Assignee: ChipMOS Technologies (Bermuda) Ltd.
    Inventor: Xuan-Feng Lu
  • REDISTRIBUTION CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20080169558
    Abstract: A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask.
    Type: Application
    Filed: March 30, 2007
    Publication date: July 17, 2008
    Applicant: CHIPMOS TECHNOLOGIES (BERMUDA) LTD.
    Inventor: Xuan-Feng Lu