Patents by Inventor Xuan-Oi Wang

Xuan-Oi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gas phase silicon etching with bromine trifluoride
    Patent number: 6436229
    Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: August 20, 2002
    Assignee: California Institute of Technology
    Inventors: Yu-Chong Tai, Xuan-Oi Wang
  • Gas phase silicon etching with bromine trifluoride
    Publication number: 20010002663
    Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
    Type: Application
    Filed: December 19, 2000
    Publication date: June 7, 2001
    Applicant: California Institute of Technology, a corporation
    Inventors: Yu-Chong Tai, Xuan-Oi Wang
  • Gas-phase silicon etching with bromine trifluoride
    Patent number: 6162367
    Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF.sub.3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF.sub.3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
    Type: Grant
    Filed: January 22, 1998
    Date of Patent: December 19, 2000
    Assignee: California Institute of Technology
    Inventors: Yu-Chong Tai, Xuan-Oi Wang