Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a silicon oxycarbonitride spacer, a silicon oxycarbide spacer, a silicon nitride spacer, and a source/drain structure. The gate structure is on the semiconductor substrate. The silicon oxycarbonitride spacer is on a sidewall of the gate structure. The silicon oxycarbide spacer is on a sidewall of the silicon oxycarbonitride spacer. The silicon nitride spacer is on a sidewall of the silicon oxycarbide spacer, in which an upper portion of the silicon nitride spacer has a lower density than a lower portion of the silicon nitride spacer. The source/drain structure is on the semiconductor substrate and adjacent to the gate structure.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.

Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.

Abstract: This patent application discloses methods, apparatus, and systems that relate to positioning for low power consumption user equipment. In one example aspect, a method for wireless communication includes receiving, by a wireless device from a network node, configuration information; and transmitting, by a wireless device, a report comprising at least one parameter.

Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Abstract: A method for making a semiconductor device includes patterning at least one dielectric layer disposed over a conductive cap layer to form a via opening penetrating through the at least one dielectric layer to expose the conductive cap layer and to form a top portion of the conductive cap layer into a metal oxide layer; converting the metal oxide layer to a metal oxynitride layer by a soft ashing process using a processing gas containing nitrogen gas; removing the metal oxynitride layer from a remaining portion of the conductive cap layer; and forming a via contact in the via opening to electrically connect the remaining portion of the conductive cap layer.

Abstract: The application belongs to the technical field of public safety, in particular to a field disaster monitoring system and method based on an aircraft relay communication, including a sensing communication terminal, an aircraft relay station and a data center server; the sensing communication terminal is used for collecting information in the field area in real time, and is connected with an airborne aircraft relay station through wireless signals transmitting the collected information; the aircraft relay station is in communication connection with a data center server through a wireless network for sending the information to the data center server; the data center server is used for receiving and analyzing the information.

Abstract: Disclosed are a self-attention-based speech quality measuring method and system for real-time air traffic control, including following steps: acquiring real-time air traffic control speech data and generating speech information frames; detecting the speech information frames, discarding unvoiced information frames of the speech information frames, generating a voiced long speech information frame; performing mel spectrogram conversion, attention extraction and feature fusion on the long speech information frame to obtain a predicted mos value.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: The present disclosure discloses a method and apparatus for mining community users, belonging to the field of Internet communications. The method includes: acquiring original community data of a community user; calculating intimacy scores of the community user with respect to other community users according to the original community data of the community user, the intimacy scores being used for indicating degrees of intimacy of the community user with respect to the other community users; clustering the community users according to the intimacy scores of the community user with respect to the other community users, and forming a community user circle; and displaying the community user circle to community users in the community user circle, so that the community users in the community user circle communicate with each other. The apparatus includes: a first acquiring module, a calculation module, a clustering module, and a display module.

Abstract: An illumination system defined a primary optical axis is provided. The illumination system comprises a light source, a first lens group, an integrator rod, and a second lens group successively located on the primary optical axis. The light source is configured to output a light. The first lens group is configured to reduce an aperture angle of the light to about 27 degrees. The integrator rod is configured to make the light uniformly. The second lens group is configured to amplify an illumination field of the light and reduce the aperture angle of the light to about 3 degrees.

Abstract: An information recommendation method is provided for a terminal. The method includes obtaining at least one keyword, obtaining geographical location information corresponding to the keyword, and searching, within a range of a map interface display area, recommendation information relevant to geographical locations adjacent to the geographical location corresponding to the geographical location information. The method also includes displaying, according to the range of the map interface display area, geographical location information corresponding to the keyword, as well as the map interface having the recommendation information.

Abstract: The present disclosure discloses a method and apparatus for mining community users, belonging to the field of Internet communications. The method includes: acquiring original community data of a community user; calculating intimacy scores of the community user with respect to other community users according to the original community data of the community user, the intimacy scores being used for indicating degrees of intimacy of the community user with respect to the other community users; clustering the community users according to the intimacy scores of the community user with respect to the other community users, and forming a community user circle; and displaying the community user circle to community users in the community user circle, so that the community users in the community user circle communicate with each other. The apparatus includes: a first acquiring module, a calculation module, a clustering module, and a display module.

Abstract: An illumination system defined a primary optical axis is provided. The illumination system comprises a light source, a first lens group, an integrator rod, and a second lens group successively located on the primary optical axis. The light source is configured to output a light. The first lens group is configured to reduce an aperture angle of the light to about 27 degrees. The integrator rod is configured to make the light uniformly. The second lens group is configured to amplify an illumination field of the light and reduce the aperture angle of the light to about 3 degrees.

Abstract: An information recommendation method is provided for a terminal. The method includes obtaining at least one keyword, obtaining geographical location information corresponding to the keyword, and searching, within a range of a map interface display area, recommendation information relevant to geographical locations adjacent to the geographical location corresponding to the geographical location information. The method also includes displaying, according to the range of the map interface display area, geographical location information corresponding to the keyword, as well as the map interface having the recommendation information.