Patents by Inventor Xuan-You Yan

Xuan-You Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode
    Patent number: 12142664
    Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: November 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih Wei Bih, Han-Wen Liao, Xuan-You Yan, Yen-Yu Chen, Chun-Chih Lin
  • Reducing Metal Gate Overhang By Forming A Top-Wide Bottom-Narrow Dummy Gate Electrode
    Publication number: 20210280692
    Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.
    Type: Application
    Filed: May 18, 2021
    Publication date: September 9, 2021
    Inventors: Shih Wei Bih, Han-Wen Liao, Xuan-You Yan, Yen-Yu Chen, Chun-Chih Lin
  • Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode
    Patent number: 10446662
    Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: October 15, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih Wei Bih, Han-Wen Liao, Xuan-You Yan, Yen-Yu Chen, Chun-Chih Lin
  • REDUCING METAL GATE OVERHANG BY FORMING A TOP-WIDE BOTTOM-NARROW DUMMY GATE ELECTRODE
    Publication number: 20180350948
    Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.
    Type: Application
    Filed: July 31, 2018
    Publication date: December 6, 2018
    Inventors: Shih Wei Bih, Han-Wen Liao, Xuan-You Yan, Yen-Yu Chen, Chun-Chih Lin
  • REDUCING METAL GATE OVERHANG BY FORMING A TOP-WIDE BOTTOM-NARROW DUMMY GATE ELECTRODE
    Publication number: 20180102418
    Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.
    Type: Application
    Filed: January 31, 2017
    Publication date: April 12, 2018
    Inventors: Shih Wei Bih, Han-Wen Liao, Xuan-You Yan, Yen-Yu Chen, Chun-Chih Lin