Abstract: A memory device and a manufacturing method thereof are disclosed in the present invention. The memory device includes a substrate, trenches, an oxide semiconductor layer, a gate dielectric layer, and word line structures. The substrate includes active regions and an isolation structure located between the active regions. The active regions contain silicon. The trenches are disposed in the active regions and the isolation structure. The oxide semiconductor layer is disposed in each trench. The gate dielectric layer is disposed on the oxide semiconductor layer and located in each trench. The word line structures are disposed on the gate dielectric layer and located in the trenches, respectively. At least a portion of the gate dielectric layer is disposed between the oxide semiconductor layer and each word line structure.

Abstract: Methods for forming via openings by using a lamellar triblock copolymer, a polymer nanocomposite, and a mixed epitaxy approach are disclosed. An example method includes forming a guiding pattern (e.g., a topographical guiding pattern, chemical guiding pattern, or mixed guiding pattern) on a surface of a layer of an IC device, forming lamellar structures based on the guiding pattern by using the lamellar triblock copolymer or forming cylindrical structures based on the guiding pattern by using the polymer nanocomposite, and forming via openings by removing a lamella from each of at least some of the lamellar structures or removing a nanoparticle from each of at least some of the cylindrical structures.

Abstract: Disclosed herein are guided vias in microelectronic structures. For example, a microelectronic structure may include a metallization layer including a conductive via in contact with a conductive line, wherein a center of a top surface of the conductive via is laterally offset from a center of a bottom surface of the conductive via.

Abstract: Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.

Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.

Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.

Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.