Patents by Inventor Xuanyao Kelvin Fong

Xuanyao Kelvin Fong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic synapse having spin-orbit torque induced spike-timing dependent plasticity
    Patent number: 10592802
    Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: March 17, 2020
    Assignee: Purdue Research Foundation
    Inventors: Abhronil Sengupta, Zubair Al Azim, Xuanyao Kelvin Fong, Kaushik Roy
  • ELECTRONIC SYNAPSE HAVING SPIN-ORBIT TORQUE INDUCED SPIKETIMING DEPENDENT PLASTICITY
    Publication number: 20170249550
    Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Purdue Research Foundation
    Inventors: Abhronil Sengupta, Zubair Al Azim, Xuanyao Kelvin Fong, Kaushik Roy