Patents by Inventor Xuanyi YUAN

Xuanyi YUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GaN based LED epitaxial structure and method for manufacturing the same
    Patent number: 9590138
    Abstract: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: March 7, 2017
    Assignee: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES
    Inventors: Yongge Cao, Zhuguang Liu, Zhonghua Deng, Jian Chen, Junting Li, Binjie Fei, Wang Guo, Fei Tang, Qiufeng Huang, Xuanyi Yuan
  • GAN BASED LED EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150021547
    Abstract: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.
    Type: Application
    Filed: July 18, 2014
    Publication date: January 22, 2015
    Inventors: Yongge CAO, Zhuguang LIU, Zhonghua DENG, Jian CHEN, Junting LI, Binjie FEI, Wang GUO, Fei TANG, Qiufeng HUANG, Xuanyi YUAN