Abstract: The present invention provides a method for manufacturing a graphene thin-film transistor, which includes: depositing a graphene layer on a surface of a copper foil; depositing a metal layer on a surface of the graphene layer; attaching a support layer to a surface of the metal layer to form a graphene film; placing the graphene film in a copper etching solution until the copper foil is dissolved completely, then transferring the graphene film to a target substrate, and removing the support layer; defining patterns of a source and a drain on the surface of the metal layer, manufacturing a source electrode and a drain electrode, and manufacturing a gate electrode on a target substrate.

Abstract: A method for manufacturing a flexible graphene electrically conductive film includes (1) providing a base and forming a graphene layer on a surface of the base; (2) providing polyvinyl alcohol, dissolving polyvinyl alcohol in water and heating to form a colloidal solution, which after cooling, forms a polyvinyl alcohol colloidal solution; and coating the polyvinyl alcohol colloidal solution on a surface of the graphene layer and drying so as to form a supporting layer on the surface of the graphene layer; (3) removing the base from the graphene layer; and (4) dissolving the supporting layer on the graphene layer in water so as to obtain a flexible graphene electrically conductive film that is free of surface residue.