Abstract: The present disclosure provides a method for experimentally determining a critical sand-carrying gas velocity of a shale gas well. The method includes: collecting well structure and production data, calculating parameter ranges of a gas flow velocity and a liquid flow velocity; carrying out a physical simulation experiment of sand carrying in the shale gas well to obtain the sand holding capacity of the wellbore under different experimental conditions, and calculating a sand holding rate; by observing a change curve of the sand holding rate of the wellbore vs. the gas flow velocity, defining a turning point, and sensitively analyzing the influence of other experimental variables on the turning point, to calculate the critical sand-carrying production of the shale gas well under different conditions. Therefore, this calculation method is simple and applicable, and provides a theoretical basis for the optimization design of water drainage and gas production process.

Abstract: The present disclosure provides a flow battery and a cell stack. The cell stack includes: a first end plate; a second end plate; and at least one cell module arranged between the first end plate and the second end plate. Each cell module includes a first flow channel end plate, a second flow channel end plate arranged opposite to the first flow channel end plate, and single-cell assemblies arranged between the first flow channel end plate and the second flow channel end plate. The single-cell assemblies include at least three hermetically-assembled cell assemblies, the first flow channel end plate is provided with arch-like flow channels, the second flow channel end plate is provided with arch-like flow channels, and each arch-like flow channel is provided with a flow channel aperture in communication with the at least three hermetically-assembled cell assemblies.

Abstract: A method for making a heterojunction photovoltaic device (200) is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The method and apparatus include an improved window layer (230) having an increased oxygen (140) concentration with higher optical bandgap and photo to dark conductivity ratio. The improved photovoltaic device (200) is made using a deposition method which incorporates the use of a gas mixture of an inert gas (115) and a predetermined amount of oxygen (140), deposited at or near room temperature. Window layers contemplated by the present invention include, but are not limited to, cadmium sulfide (CdS) and various alloys of zinc cadmium sulfide (ZnxCd1-xS). To further increase the efficiency of the resultant photovoltaic device (200), deposition parameters are controlled and monitored to improve the deposited window layer (230).

Abstract: A process for preparing thin Cd2SnO4 films. The process comprises the steps of RF sputter coating a Cd2SnO4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd2SnO4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd2SnO4 and CdS layers to a temperature sufficient to induce crystallization of the Cd2SnO4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd2SnO4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600° C., allowing the use of inexpensive soda lime glass substrates.

Abstract: A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Abstract: A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Abstract: A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.