Patents by Inventor Xuanzuo LIU

Xuanzuo LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive hydrogen sensor and sensing method thereof
    Patent number: 11408949
    Abstract: A magnetoresistive hydrogen sensor and sensing method thereof, wherein the hydrogen sensor comprises a substrate located in an X-Y plane, magnetoresistive sensing units and magnetoresistive reference units located on the substrate. The magnetoresistive sensing units are electrically connected to form a sensing arm, and the magnetoresistive reference units are electrically connected to form a reference arm. The sensing arm and the reference arm are electrically interconnected to form a referenced bridge structure. The magnetoresistive sensing units and the magnetoresistive reference units may be AMR units having the same magnetic multilayer thin film structure, GMR spin valves, or GMR multilayer film stacks having the same magnetic multilayer thin film structure. The magnetoresistive sensing units and the magnetoresistive reference units are respectively covered with a Pd layer, and a passivating insulation layer is deposited over the Pd layer of the magnetoresistive reference units.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: August 9, 2022
    Assignee: MultiDimension Technology Co., Ltd.
    Inventors: James Geza Deak, Xuanzuo Liu
  • MAGNETORESISTIVE HYDROGEN SENSOR AND SENSING METHOD THEREOF
    Publication number: 20220011385
    Abstract: A magnetoresistive hydrogen sensor and sensing method thereof, wherein the hydrogen sensor comprises a substrate located in an X-Y plane, magnetoresistive sensing units and magnetoresistive reference units located on the substrate. The magnetoresistive sensing units are electrically connected to form a sensing arm, and the magnetoresistive reference units are electrically connected to form a reference arm. The sensing arm and the reference arm are electrically interconnected to form a referenced bridge structure. The magnetoresistive sensing units and the magnetoresistive reference units may be AMR units having the same magnetic multilayer thin film structure, GMR spin valves, or GMR multilayer film stacks having the same magnetic multilayer thin film structure. The magnetoresistive sensing units and the magnetoresistive reference units are respectively covered with a Pd layer, and a passivating insulation layer is deposited over the Pd layer of the magnetoresistive reference units.
    Type: Application
    Filed: November 13, 2019
    Publication date: January 13, 2022
    Inventors: James Geza Deak, Xuanzuo LIU