Abstract: The present invention relates to methods and compositions for transforming soybean, corn, cotton, or canola explants using spectinomycin as a selective agent for transformation of the explants. The method may further comprise treatment of the explants with cytokinin during the transformation and regeneration process.

Abstract: The present invention provides methods for the production of viable explants from mature corn seeds, wherein the explant comprises the apical portion of the embryo axis of the corn seed. The present invention also relates to methods for producing such explants and for transforming the explants with a heterologous DNA.

Abstract: An epitaxial growth method for preventing auto-doping effect is presented. This method starts with the removal of impurities from the semiconductor substrate and the reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region.

Abstract: A magnetic sensing apparatus includes a third direction magnetic sensing component. The third direction magnetic sensing component includes: a substrate having groove in its surface; a magnetic conductive unit, and an inducing unit. The main part of the magnetic conductive unit is set in the groove, and a part of it is exposed out the groove and to surface of the substrate, in order to collect magnetic field signal in the third direction and output the magnetic field signal. The inducing unit is disposed on the surface of the substrate, to receive the magnetic field signal in the third direction and measuring corresponding magnetic field strength and direction in the third direction by the magnetic field signal.

Abstract: A magnetic sensing apparatus includes a third direction magnetic sensing component that includes a substrate and a pair of coupled magnetic sensing modules. A groove is set in surface of the substrate. The magnetic sensing module includes a magnetic conductive unit, where a main part of the magnetic conductive unit is set in the groove, and a part of it is exposed out the groove and to surface of the substrate, in order to collect magnetic field signal in the third direction and output the magnetic field signal. The magnetic conductive unit includes a magnetic material layer. The magnetic sensing module includes an inducing configured to receive the magnetic field signal in the third direction and measure corresponding magnetic field strength in the third direction by the magnetic field signal. The inducing unit includes a magnetic material layer.

Abstract: The present invention discloses a method of fabricating dual trench isolated epitaxial diode array. This method starts with the formation of heavily-doped first conductivity type regions and heavily-doped second conductivity type regions on the substrate, followed by epitaxial growth, then the formation of the isolations between diode array word lines by deep trench etch and the formation of the isolations between bit lines vertical to deep trenches by shallow trench etch, and finally the formation of separate diode array cells in the regions enclosed by deep and shallow trench isolations by ion implantation. This invention also provides a method of preventing the crosstalk current between adjacent word lines and bit lines of epitaxial diode arrays isolated by foregoing dual shallow trenches.

Abstract: The present invention discloses a method of fabricating dual trench isolated epitaxial diode array. This method starts with the formation of heavily-doped first conductivity type regions and heavily-doped second conductivity type regions on the substrate, followed by epitaxial growth, then the formation of the isolations between diode array word lines by deep trench etch and the formation of the isolations between bit lines vertical to deep trenches by shallow trench etch, and finally the formation of separate diode array cells in the regions enclosed by deep and shallow trench isolations by ion implantation. This invention also provides a method of preventing the crosstalk current between adjacent word lines and bit lines of epitaxial diode arrays isolated by foregoing dual shallow trenches.

Abstract: This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling.

Abstract: A method for using a calibration standard. The method includes providing a calibration standard. In a specific embodiment, the calibration standard has a substrate, a thickness of material having an edge region; and a conformal material of uniform thickness disposed on the edge region. The standard also has an upper surface pattern having the uniform thickness provided on the edge region. The method also includes using the upper surface pattern for a calibration process on a scanning electron microscope process.

Abstract: A method for using a calibration standard. The method includes providing a calibration standard. In a specific embodiment, the calibration standard has a substrate, a thickness of material having an edge region; and a conformal material of uniform thickness disposed on the edge region. The standard also has an upper surface pattern having the uniform thickness provided on the edge region. The method also includes using the upper surface pattern for a calibration process on a scanning electron microscope process.

Abstract: A system and method for scheduling outsourced production is provided. The system includes an order generating module (111), a consignee assigning module (121), a consignee operating module (131), a data processing module (112) and an order canceling module (113). When there is a demand for outsourcing, the order generating module (111) generates a consignment order. Then the consignee assigning module (121), according to the content of the consignment order, determines a consignee. After the consignment order is fulfilled, the data processing module (112) guides a consignor to inspect the products based on the consignment order. If the consignment order is decided to be canceled, the order canceling module (113) can do so before a consignee is assigned.