Abstract: A substrate integrated with passive devices and a manufacturing method thereof are provided.

Abstract: The present disclosure discloses a system for intelligently leveling with an automatic temperature control function and a method thereof. The system includes a handcart-type leveller, indoor GPS positioning devices, an AGV trolley temperature measuring device and a control system. The control system processes position parameters of the AGV trolley temperature measuring device and the handcart-type leveller; converts the position parameters for the handcart-type leveller into position parameters for a leveling region, controlling the AGV trolley temperature measuring device to arrive at a lower part of the leveling region by a control chip and measuring temperatures in the leveling region; controlling an operation status of the AGV trolley temperature measuring device and transmitting data with the AGV trolley temperature measuring device.

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

Abstract: Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.

Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

Abstract: Embodiments of process kit components for use in a substrate support, and substrate supports incorporating same, are provided herein. In some embodiments, the substrate support may include a body, a grounding shell formed of an electrically conductive material disposed about the body, a liner formed of an electrically conductive material disposed about the grounding shell, where the liner includes an upper lip that extends inwardly towards the body, a metal fastener disposed through the upper lip to couple the liner to the grounding shell, and a first insulator ring disposed atop the upper lip of the liner and covering the metal fastener.

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

Abstract: A mold clamping system for exothermic reaction welding adapted to be power-operated by a power device, the combination comprising a first member adapted to support a first mold portion; a second member adapted to support a second mold portion; and a drive mechanism, adapted to be coupled to the power device, coupled to at least one of said first and second members and capable of moving the first and second members between a first position, in which the first and second mold portions are spaced apart, and a second position, in which the first and second mold portions are engaged, upon actuation of the power device in a first and a second direction, respectively.

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

Abstract: Embodiments of process kit components for use in a substrate support, and substrate supports incorporating same, are provided herein. In some embodiments, the substrate support may include a body, a grounding shell formed of an electrically conductive material disposed about the body, a liner formed of an electrically conductive material disposed about the grounding shell, where the liner includes an upper lip that extends inwardly towards the body, a metal fastener disposed through the upper lip to couple the liner to the grounding shell, and a first insulator ring disposed atop the upper lip of the liner and covering the metal fastener.

Abstract: Embodiments described herein include a processing tool comprising configured for rapid and stable changes in the processing pressure. In an embodiment, the processing tool may comprises a chamber body. In an embodiment, the chamber body is a vacuum chamber. The processing tool may further comprise a chuck for supporting a substrate in the chamber body. In an embodiment, the processing tool may also comprise a cathode liner surrounding the chuck and a flow confinement ring aligned with the cathode liner. In an embodiment, the cathode liner and the flow confinement ring define an opening between a main processing volume and a peripheral volume of the vacuum chamber.

Abstract: In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

Abstract: Methods and apparatus for controlling gas flow to a process chamber are disclosed herein. In some embodiments, a processing system includes a first process chamber having a first gas input; a first gas break disposed upstream of the first gas input; a first adjustable valve disposed upstream of the first gas break; and a first isolation valve disposed upstream of the first adjustable valve. The processing system may further include a second process chamber having a second gas input; a second gas break disposed upstream of the second gas input; a second adjustable valve disposed upstream of the second gas break; and a second isolation valve disposed upstream of the second adjustable valve. A shared gas source may be disposed upstream of the first isolation valve and the second isolation valve to provide one or more gases to the first process chamber and to the second process chamber.

Abstract: Apparatus for plasma processing are provided herein. In some embodiments, a process chamber includes: a chamber body having a processing volume within; a dielectric adapter ring disposed atop the chamber body; a multi-zone showerhead disposed atop the dielectric adapter ring to provide process gas to the processing volume; and an inductively-coupled RF coil disposed about an upper portion of the chamber body to couple RF energy to the processing volume.

Abstract: A mold clamping system for exothermic reaction welding adapted to be power-operated by a power device, the combination comprising a first member adapted to support a first mold portion; a second member adapted to support a second mold portion; and a drive mechanism, adapted to be coupled to the power device, coupled to at least one of said first and second members and capable of moving the first and second members between a first position, in which the first and second mold portions are spaced apart, and a second position, in which the first and second mold portions are engaged, upon actuation of the power device in a first and a second direction, respectively.