Abstract: A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode 4 for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.

Abstract: A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode 4 for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.

Abstract: A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer.A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.