Patents by Inventor Xue Peng Yang

Xue Peng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127464
    Abstract: In a channel-stacked memory device which includes a first channel stacked on a second channel, the first channel is programmed in a bottom-to-top direction and the second channel is programmed in a top-to-bottom direction. The electrons in the first channel may be drained by a bit line, while the electrons in the second channel may be drained by a well region.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: September 21, 2021
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Xue Peng Yang, Kaikai You
  • Publication number: 20210249082
    Abstract: In a channel-stacked memory device which includes a first channel stacked on a second channel, the first channel is programmed in a bottom-to-top direction and the second channel is programmed in a top-to-bottom direction. The electrons in the first channel may be drained by a bit line, while the electrons in the second channel may be drained by a well region.
    Type: Application
    Filed: March 23, 2020
    Publication date: August 12, 2021
    Inventors: Xue Peng Yang, Kaikai You