Patents by Inventor Xue-Shen Wang

Xue-Shen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9206049
    Abstract: A method for making carbon nanotubes is disclosed. The method includes steps of: (a) providing a growing device, wherein the growing device comprises a reacting room having a gas inlet and a gas outlet; (b) forming a catalyst layer on a first planar surface of a growing substrate; (c) placing the growing substrate and a receiving substrate having a second planar surface in the reacting room, wherein the first planar surface and the second planar surface are parallel with each other; (d) introducing a carbonaceous gas in the reaction room to form a gas flow and growing a first plurality of carbon nanotubes from the growing substrate, wherein the first plurality of carbon nanotubes are brought above the receiving substrate by the gas flow; and (e) stopping the introducing the carbonaceous gas such that the first plurality of carbon nanotubes deposits on the receiving substrate.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: December 8, 2015
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 9153667
    Abstract: A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the carbon nanotube layer from the growing substrate onto the insulating layer, wherein the insulating layer insulates the carbon nanotube layer from the gate electrode; and placing a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of the plurality of carbon nanotubes.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: October 6, 2015
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Qun-Qing Li, Xue-Shen Wang, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 9052307
    Abstract: A method for fabricating a plurality of biosensors includes the steps of: providing a base with a surface; forming a carbon nanotube array including a plurality of carbon nanotubes substantially parallels to each other on the surface; forming a plurality of lead pairs on the surface, the plurality of lead pairs divides the plurality of carbon nanotubes into a plurality of first carbon nanotubes and a plurality of second carbon nanotubes; eliminating the plurality of second carbon nanotubes; cutting the plurality of first carbon nanotubes to form a plurality of third carbon nanotubes and a plurality of fourth carbon nanotubes; and fabricating a plurality of receptors to electrically connect the plurality of third carbon nanotubes to the plurality of fourth carbon nanotubes.
    Type: Grant
    Filed: July 16, 2013
    Date of Patent: June 9, 2015
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Shou-Shan Fan
  • Publication number: 20140170056
    Abstract: A method for making carbon nanotubes is disclosed. The method includes steps of: (a) providing a growing device, wherein the growing device comprises a reacting room having a gas inlet and a gas outlet; (b) forming a catalyst layer on a first planar surface of a growing substrate; (c) placing the growing substrate and a receiving substrate having a second planar surface in the reacting room, wherein the first planar surface and the second planar surface are parallel with each other; (d) introducing a carbonaceous gas in the reaction room to form a gas flow and growing a first plurality of carbon nanotubes from the growing substrate, wherein the first plurality of carbon nanotubes are brought above the receiving substrate by the gas flow; and (e) stopping the introducing the carbonaceous gas such that the first plurality of carbon nanotubes deposits on the receiving substrate.
    Type: Application
    Filed: February 24, 2014
    Publication date: June 19, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua University
    Inventors: XUE-SHEN WANG, QUN-QING LI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20140051215
    Abstract: A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the carbon nanotube layer from the growing substrate onto the insulating layer, wherein the insulating layer insulates the carbon nanotube layer from the gate electrode; and placing a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of the plurality of carbon nanotubes.
    Type: Application
    Filed: October 22, 2013
    Publication date: February 20, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: QUN-QING LI, XUE-SHEN WANG, KAI-LI JIANG, SHOU-SHAN FAN
  • Patent number: 8603347
    Abstract: A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: December 10, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 8597990
    Abstract: A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: December 3, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Qun-Qing Li, Xue-Shen Wang, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20130298394
    Abstract: A method for fabricating a plurality of biosensors includes the steps of: providing a base with a surface; forming a carbon nanotube array including a plurality of carbon nanotubes substantially parallels to each other on the surface; forming a plurality of lead pairs on the surface, the plurality of lead pairs divides the plurality of carbon nanotubes into a plurality of first carbon nanotubes and a plurality of second carbon nanotubes; eliminating the plurality of second carbon nanotubes; cutting the plurality of first carbon nanotubes to form a plurality of third carbon nanotubes and a plurality of fourth carbon nanotubes; and fabricating a plurality of receptors to electrically connect the plurality of third carbon nanotubes to the plurality of fourth carbon nanotubes.
    Type: Application
    Filed: July 16, 2013
    Publication date: November 14, 2013
    Inventors: XUE-SHEN WANG, QUN-QING LI, SHOU-SHAN FAN
  • Patent number: 8512533
    Abstract: A biosensor includes a plurality of electrodes and a receptor. The plurality of electrodes comprises a plurality of carbon nanotubes. The receptor are located between the plurality of electrodes and electrically connected to the plurality of carbon nanotubes of the plurality of electrodes. In addition, the receptor reacts to a measured object to lead current variation which is transmitted by the plurality of electrodes.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: August 20, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 8492682
    Abstract: A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: July 23, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 8241972
    Abstract: A method for making a flexible semiconductor device includes the following steps. A rigid substrate is provided. A flexible substrate is provided, and placed on the rigid substrate. A semiconductor device is directly formed on the flexible substrate using a semiconductor process. After the rigid substrate is removed, the flexible semiconductor device is formed.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: August 14, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li
  • Publication number: 20120168402
    Abstract: A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position.
    Type: Application
    Filed: December 22, 2011
    Publication date: July 5, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: XUE-SHEN WANG, QUN-QING LI, SHOU-SHAN FAN
  • Patent number: 8211398
    Abstract: A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: July 3, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Shou-Shan Fan
  • Publication number: 20120164372
    Abstract: A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the carbon nanotube is equal to or greater than 1 centimeter.
    Type: Application
    Filed: March 5, 2012
    Publication date: June 28, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: XUE-SHEN WANG, QUN-QING LI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20120125915
    Abstract: A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.
    Type: Application
    Filed: December 30, 2010
    Publication date: May 24, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: XUE-SHEN WANG, QUN-QING LI, SHOU-SHAN FAN
  • Publication number: 20120107178
    Abstract: A biosensor includes a plurality of electrodes and a receptor. The plurality of electrodes comprises a plurality of carbon nanotubes. The receptor are located between the plurality of electrodes and electrically connected to the plurality of carbon nanotubes of the plurality of electrodes. In addition, the receptor reacts to a measured object to lead current variation which is transmitted by the plurality of electrodes.
    Type: Application
    Filed: January 18, 2011
    Publication date: May 3, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: XUE-SHEN WANG, QUN-QING LI, SHOU-SHAN FAN
  • Patent number: 8163340
    Abstract: A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of ultralong carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the ultralong carbon nanotube is equal to or greater than 1 centimeter. The invention is also related to a method for making the above-described carbon nanotube film structure.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: April 24, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Shen Wang, Qun-Qing Li, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20110305625
    Abstract: A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.
    Type: Application
    Filed: November 23, 2010
    Publication date: December 15, 2011
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: XUE-SHEN WANG, QUN-QING LI, SHOU-SHAN FAN
  • Publication number: 20110003442
    Abstract: A method for making a flexible semiconductor device includes the following steps. A rigid substrate is provided. A flexible substrate is provided, and placed on the rigid substrate. A semiconductor device is directly formed on the flexible substrate using a semiconductor process. After the rigid substrate is removed, the flexible semiconductor device is formed.
    Type: Application
    Filed: May 17, 2010
    Publication date: January 6, 2011
    Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: XUE-SHEN WANG, QUN-QING LI
  • Publication number: 20090291534
    Abstract: A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer.
    Type: Application
    Filed: April 2, 2009
    Publication date: November 26, 2009
    Applicants: Tsinghua University, HON HAI Precision Industry Co., LTD.
    Inventors: Qun-Qing Li, Xue-Shen Wang, Kai-Li Jiang, Shou-Shan Fan