Abstract: Embodiments of the disclosure disclose a method and apparatus for presenting live-streaming information, an electronic device and a storage medium. The method includes: receiving a live-streaming information recording request from an object provider, and presenting a live-streaming information recording interface, wherein the live-streaming information recording interface presents at least one live-streaming room identifier corresponding to the object provider; receiving a live-streaming room identifier selection operation inputted for the at least one live-streaming room identifier, taking a live-streaming room corresponding to the selected live-streaming room identifier as a target live-streaming room, and presenting a completed live-streaming time period corresponding to the target live-streaming room; and receiving an information input operation for the completed live-streaming time period, and presenting live-streaming information corresponding to the information input operation.

Abstract: An embodiment of the present application discloses a display panel and a mobile terminal, wherein a concave structure having a reflective sidewall is provided on each anode, an area of a first anode is greater than an area of a second anode, and the area of the second anode is greater than an area of a third anode. A ratio of an area of the concave structure on the first anode to the area of the first anode is less than a ratio of an area of the concave structure on the second anode to the area of the second anode, and is less than a ratio of an area of the concave structure on the third anode to the area of the third anode.

Abstract: An example memory includes a plurality of storage units and bit lines distributed in an array in a storage area of the memory, where each of the storage unit includes a transistor and a magnetic tunnel junction (MTJ) element connected to the transistor. The MTJ element is disposed on a current transmission path between a source or a drain of the transistor and the bit line. The MTJ element includes a pinning layer, a reference layer, a tunneling layer, and a free layer that are stacked in sequence, and a magnetization direction of the pinning layer is parallel to a stacking direction of layers in the MTJ. The example memory further includes a first magnetic structure disposed on the current transmission path and in contact with the MTJ element. An included angle between a magnetization direction of the first magnetic structure and the magnetization direction of the pinning layer is (90°, 180°].

Abstract: Compounds disclosed herein have been shown to bind to the transferrin receptor making them capable of crossing the blood-brain barrier (BBB) and useful for treating diseases or disorders of the brain, such as cancer, ischemic stroke, Alzheimer's disease, or Parkinson's disease.

Abstract: The present invention is directed to compositions and methods for treating hepatitis B virus infection. In particular, the present invention is directed to a combination therapy comprising administration of a therapeutic oligonucleotide targeting HBV and a TLR7 agonist for use in the treatment of a chronic hepatitis B patient.

Abstract: The present invention relates to method of treating HBV infection in a human patient, wherein the method comprises administration of a therapeutically effective amount of Compound (I), or a pharmaceutically acceptable salt thereof.

Abstract: The present invention discloses a pharmaceutical preparation for treating hepatitis B, a preparation method and use thereof. The pharmaceutical preparation comprises a solution of hepatitis B surface antigen, further a solution of hepatitis B core antigen, and furthermore an oligodeoxynucleotide solution. The pharmaceutical preparation is free of saccharide, has a simple composition and a good antigen stability, without the adverse reactions caused by aluminum adjuvants, and shows good preservation effects in long-term stability experiments.

Abstract: Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque.

Abstract: Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque.

Abstract: A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

Abstract: The present teaching relates to matching users with items. In one example, information related to one or more users is obtained from one or more sources including an online source. The information is transformed into one or more psychological needs of each user. One or more items are obtained. Each item is associated with abilities to satisfy one or more psychological needs. The one or more users are matched with the one or more items based on the users' psychological needs and the items' abilities to satisfy psychological needs to generate a matching result. The matching result is provided.

Abstract: The present teaching relates to obtaining information from a user via a bot. In one example, a request is obtained to collect information in connection with a user. A statement is generated to be expressed to the user for facilitating a conversation between the user and the bot based on the request. Information is received in connection with the user and collected during the conversation. The collected information characterizes the user in a plurality of modalities. The collected information is automatically analyzed in the plurality of modalities to obtain an assessment of one or more human traits of the user. A plurality of result summaries are generated based on the assessment. The plurality of result summaries are provided in response to the request.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer embodied as a synthetic antiferromagnetic device, and a nonmagnetic barrier layer sandwiched between the pinned magnetic layer and the free magnetic layer. The free magnetic layer includes a first ferromagnetic layer, a second ferromagnetic layer and a nonmagnetic spacing layer sandwiched between them; and can transform from the antiferromagnetic state to the ferromagnetic state regulated by electric field. Under the coaction of the electric field and the current, the ferromagnetic layer close to the barrier layer of the magnetic tunnel junction is switched to write in data. Also, a magnetic random access memory based on a synthetic antiferromagnetic free layer can write in data under the coaction of the electric field and the current, and has advantages such as simple structure, low power consumption, rapid speed, radiation resistant, and non-volatility.

Abstract: A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

Abstract: An electrolyte for a lithium-ion battery and a lithium-ion battery. The electrolyte for a lithium-ion battery comprises a non-aqueous organic solvent, a lithium salt, and an electrolyte additive. The additive is selected from compounds of formula 1, wherein R1 is selected from unsaturated alkyls having three to six carbon atoms, and R2 is selected from alkylenes having two to five carbon atoms. Because the molecular structure of the additive comprises both unsaturated carbon-carbon bonds and cyanos, polymerization can occur on an electrode surface to form a compound containing multiple cyanos. The compound can be complexed with metal ions on a surface of a cathode material, thereby inhibiting electrolyte decomposition on an electrode surface to improve high-temperature storage and cyclability of a battery.

Abstract: Disclosed is a lithium ion battery non-aqueous electrolyte and a lithium ion battery, in which the electrolyte comprises: a non-aqueous organic solvent, a lithium salt and an additive, said additive comprises: a compound represented by the structural formula 1 and a compound represented by the structural formula 2, in which R is an alkyl selected from an alkyl group having 1 to 4 carbon atoms, the ratio of the content of the compound represented by the structural formula 1 to the total mass of the lithium ion battery non-aqueous electrolyte is 0.1% to 2%, and the ratio of the content of the compound represented by the structural formula 2 to the total mass of the lithium ion battery non-aqueous electrolyte is less than 0.5%.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer embodied as a synthetic antiferromagnetic device, and a nonmagnetic barrier layer sandwiched between the pinned magnetic layer and the free magnetic layer. The free magnetic layer includes a first ferromagnetic layer, a second ferromagnetic layer and a nonmagnetic spacing layer sandwiched between them; and can transform from the antiferromagnetic state to the ferromagnetic state regulated by electric field. Under the coaction of the electric field and the current, the ferromagnetic layer close to the barrier layer of the magnetic tunnel junction is switched to write in data. Also, a magnetic random access memory based on a synthetic antiferromagnetic free layer can write in data under the coaction of the electric field and the current, and has advantages such as simple structure, low power consumption, rapid speed, radiation resistant, and non-volatility.

Abstract: A magnetic tunnel junction device and a magnetic random access memory based on a synthetic antiferromagnetic pinned layer are disclosed, relating to a multilayer structure which is suitable for a pinned layer, namely a synthetic antiferromagnetic device. Antiferromagnetic coupling of the synthetic antiferromagnetic device can be enhanced by electric field. The synthetic antiferromagnetic device can be used as a pinned layer of the magnetic tunnel junction, and the antiferromagnetic coupling is enhanced under the electric field to ensure that a ferromagnetic layer, which is close to a barrier layer, of the pinned layer will not be switched, thereby achieving stable data writing. The magnetic random access memory is formed by the magnetic tunnel junction based on the synthetic antiferromagnetic pinned layer, has advantages such as, high density, low power consumption, high speed, radiation resistance and non-volatility.

Abstract: An electrolyte for a lithium-ion battery and a lithium-ion battery. The electrolyte for a lithium-ion battery comprises a non-aqueous organic solvent, a lithium salt, and an electrolyte additive. The additive is selected from compounds of formula 1, wherein R1 is selected from unsaturated alkyls having three to six carbon atoms, and R2 is selected from alkylenes having two to five carbon atoms. Because the molecular structure of the additive comprises both unsaturated carbon-carbon bonds and cyanos, polymerization can occur on an electrode surface to form a compound containing multiple cyanos. The compound can be complexed with metal ions on a surface of a cathode material, thereby inhibiting electrolyte decomposition on an electrode surface to improve high-temperature storage and cyclability of a battery.