Patents by Inventor Xuebing Feng
Xuebing Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170241402Abstract: A large-size wind power blade with a multi-beam structure and its manufacturing method, wherein the blade adopts a hollow layout structure and comprises a blade skin suction edge, a blade skin pressure edge, a main load-carrying structure crossbeam and anti-shearing webs, wherein the blade skin suction edge and the blade skin pressure edge are combined to form a cavity structure having a streamlined cross section, wherein a support structure formed by the combination of the main load-carrying structure crossbeam and the anti-shearing web is located in the cavity. Both the blade skin suction edge and the blade skin pressure edge adopt a multi-segment combined structure, wherein the multiple segments are connected to the side surface of the main load-carrying structure crossbeam to integrally form the blade skin suction edge and the skin pressure edge.Type: ApplicationFiled: March 18, 2015Publication date: August 24, 2017Applicant: ZHUZHOU TIMES NEW MATERIALS TECHNOLOGY CO., LTD.Inventors: Xuebing FENG, Chaoyi PENG, Jingcheng ZENG, Hang DENG, Fubiao YANG, Ziqian ZHANG
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Patent number: 8670271Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.Type: GrantFiled: April 5, 2013Date of Patent: March 11, 2014Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Zheng Gao, Wonjoon Jung, Xuebing Feng, Xiaohua Lou, Haiwen Xi
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Publication number: 20130228884Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.Type: ApplicationFiled: April 5, 2013Publication date: September 5, 2013Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Zheng Gao, Wonjoon Jung, Xuebing Feng, Xiaohue Lou, Haiwen Xi
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Patent number: 8416620Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.Type: GrantFiled: November 11, 2010Date of Patent: April 9, 2013Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Zheng Gao, Wonjoon Jung, Xuebing Feng, Xiaohua Lou, Haiwen Xi
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Patent number: 8339736Abstract: A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.Type: GrantFiled: June 20, 2007Date of Patent: December 25, 2012Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Sining Mao, Eric S. Linville, Xuebing Feng, Shaoping Li, Steven Paul Bozeman
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Publication number: 20120018788Abstract: A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.Type: ApplicationFiled: September 29, 2011Publication date: January 26, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xuebing Feng, Zheng Gao
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Patent number: 8039913Abstract: A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.Type: GrantFiled: April 17, 2009Date of Patent: October 18, 2011Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Zheng Gao, Xuebing Feng
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Patent number: 7936598Abstract: A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.Type: GrantFiled: April 28, 2009Date of Patent: May 3, 2011Assignee: Seagate TechnologyInventors: Yuankai Zheng, Zheng Gao, Wonjoon Jung, Xuebing Feng, Xiaohua Lou, Haiwen Xi
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Publication number: 20110058412Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.Type: ApplicationFiled: November 11, 2010Publication date: March 10, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Haiwen Xi, Wonjoon Jung, Xuebing Feng, Xiaohua Lou, Zheng Gao
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Publication number: 20100271870Abstract: A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.Type: ApplicationFiled: April 28, 2009Publication date: October 28, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Haiwen Xi, Wonjoon Jung, Xuebing Feng, Xiaohua Lou, Zheng Gao
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Publication number: 20100090261Abstract: A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.Type: ApplicationFiled: April 17, 2009Publication date: April 15, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Xuebing Feng, Zheng Gao
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Publication number: 20080316631Abstract: A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.Type: ApplicationFiled: June 20, 2007Publication date: December 25, 2008Applicant: Seagate Technology LLCInventors: Kaizhong Gao, Sining Mao, Eric S. Linville, Xuebing Feng, Shaoping Li, Steven Paul Bozeman