Abstract: Embodiments of the present application relate to the technical field of semiconductors, and provide a manufacturing method for an N-polar GaN transistor structure and a semiconductor structure. A Ga-polar epitaxial functional layer is formed by depositing, a supporting substrate is formed on the epitaxial functional layer by bonding, after the epitaxial structure is inverted, a structural substrate and a buffer layer are removed, and a source, a drain, and a gate are manufactured on the side of the exposed epitaxial functional layer away from the supporting substrate, to form an N-polar GaN transistor structure.

Abstract: Provided are a scrubber brush assembly and a vacuum cleaner having same. The scrubber brush assembly includes a roller brush body and a scraping sleeve. The roller brush body is rotatable around a first rotation center line and has a bristle (12) provided thereon. The scraping sleeve is rotatable around a second rotation center line noncoincident with the first rotation center line and sleeved over the roller brush body. The scraping sleeve has a scraping sleeve hole defined thereon. The bristle is adapted to be extended out of or retracted into the scraping sleeve hole in a wall thickness direction of the scraping sleeve.

Abstract: Provided are a dust cup and a vacuum cleaner having the same. The dust cup includes: a dust cup body having a cyclone chamber enclosure plate, and a cyclone is arranged in a region enclosed by the cyclone chamber enclosure plate; and a cover plate detachably connected to the dust cup body, and a cyclone cavity is formed between the cyclone chamber enclosure plate and the cover plate.

Abstract: Provided are a storage base and a vacuum cleaner assembly having the same. The storage base is configured to store a vacuum cleaner. The storage base includes a first component connecting portion configured to store a first component of the vacuum cleaner and a second component storage portion configured to store a second component of the vacuum cleaner. The first component connecting portion and the second component storing portion are staggered with each other in a circumferential direction of the storage base.

Abstract: The present disclosure provides a display panel and a preparation method thereof. The display panel includes a substrate, a thin film transistor, a pixel layer, and a thin film encapsulation layer. Wherein the thin film encapsulation layer includes a first inorganic layer, a first organic layer, and a second organic layer. The preparation method of the display panel includes the following steps: a substrate provision step, a thin film transistor preparation step, a pixel layer preparation step, and a thin film encapsulating layer preparation step.

Abstract: A flexible display panel and a manufacturing method thereof are provided. By filling a protective film in a stress concentration area of an inorganic film layer at a corner of a dam, a slope of a side wall of the dam can be effectively reduced, and stress concentration effect of the inorganic film layer in an upper packaging structure is reduced to a certain extent. When the protective film is subjected to stress, it can effectively relieve the stress and weaken or even eliminate stress effect of the packaging structure on an anode layer at a corner of the dam.

Abstract: An air handling assembly and a cleaning apparatus having same are provided. The air handling assembly includes: a cyclonic chamber, a cyclonic cone, a dust collection chamber and an exhaust chamber. The cyclonic chamber has a dirty air inlet, a clean air outlet and a dust fall opening. The cyclonic cone is arranged inside the cyclonic chamber, an air exit of the cyclonic cone is arranged away from the dust fall opening, and an end of the cyclonic cone close to the dust fall opening is spaced apart from an end of the cyclonic chamber at which the dust fall opening is arranged.

Abstract: A flexible organic light emitting diode (OLED) display panel and a foldable display device are provided. The flexible OLED display panel includes a flexible substrate and an elastic material layer. The flexible substrate includes a folding zone and two non-folding zones located on left and right sides of the folding zone. The elastic material layer is disposed over a bottom surface corresponding to the folding zone of the flexible substrate.

Abstract: A flexible display panel and a manufacturing method thereof are provided. By filling a protective film in a stress concentration area of an inorganic film layer at a corner of a dam, a slope of a side wall of the dam can be effectively reduced, and stress concentration effect of the inorganic film layer in an upper packaging structure is reduced to a certain extent. When the protective film is subjected to stress, it can effectively relieve the stress and weaken or even eliminate stress effect of the packaging structure on an anode layer at a corner of the dam.

Abstract: A flexible organic light emitting diode (OLED) display panel and a foldable display device are provided. The flexible OLED display panel includes a flexible substrate and an elastic material layer. The flexible substrate includes a folding zone and two non-folding zones located on left and right sides of the folding zone. The elastic material layer is disposed over a bottom surface corresponding to the folding zone of the flexible substrate.

Abstract: The present disclosure provides a display panel and a preparation method thereof. The display panel includes a substrate, a thin film transistor, a pixel layer, and a thin film encapsulation layer. Wherein the thin film encapsulation layer includes a first inorganic layer, a first organic layer, and a second organic layer. The preparation method of the display panel includes the following steps: a substrate provision step, a thin film transistor preparation step, a pixel layer preparation step, and a thin film encapsulating layer preparation step.

Abstract: The present invention discloses an OLED display and a manufacturing method thereof. The OLED display includes a substrate, a barrier layer, a TFT driving circuit, an insulating layer, an organic light-emitting layer and an encapsulating layer. The barrier layer has a reversed trapezoid structure. The organic light-emitting layer breaks at the reversed trapezoid structure. By the reversed trapezoid structure, the organic light-emitting film layer automatically breaks at the reversed trapezoid structure in a flat layer such that a path of lateral invasion of moisture and oxygen is cut away. After encapsulation is completed, a through hole is formed by laser cutting, which greatly reduces manufacturing difficulty.

Abstract: An OLED (organic light emitting diode) display panel is provided. The OLED display includes a substrate having a display region and a non-display region disposed around the display region, and the non-display region is provided with a partition wall. A first inorganic layer is disposed on the display region and the partition wall. A hydrophobic layer is disposed on the first inorganic layer and located corresponding to the partition wall. An organic layer is disposed on the first inorganic layer and a portion of the hydrophobic layer, wherein the organic layer is disposed on an inner side of the partition wall adjacent to the display region. A second inorganic layer is disposed on the organic layer.

Abstract: The present invention discloses an OLED thin film encapsulation structure, which includes a substrate, an insulating layer, a display layer, and a thin film encapsulation layer. A first trench is disposed in the insulating layer, the display layer is enclosed by the trench, and the thin film encapsulation layer includes a first inorganic layer and a first organic layer, wherein the first inorganic layer is in contact with the insulating layer at a position corresponding to the first trench, and has a thickness smaller than a depth of the first trench, such that a remaining depth of the first trench not covered by the first inorganic layer limits a boundary of the first organic layer. As such, the first inorganic layer of the thin film encapsulation structure can be directly in contact with the inorganic layer in the OLED structure, and a lateral intrusion path of water-oxygen can be prolonged.

Abstract: The present invention provides a thin film package structure of an organic light emitting diode (OLED) display, comprising an inorganic layer and an organic layer, wherein the inorganic layer and the organic layer are formed on a substrate, and the inorganic layer and the organic layer are alternately disposed, wherein the inorganic layer comprises an inorganic polymer doped with metal nanoparticles.

Abstract: An OLED (organic light emitting diode) display panel is provided. The OLED display includes a substrate having a display region and a non-display region disposed around the display region, and the non-display region is provided with a partition wall. A first inorganic layer is disposed on the display region and the partition wall. A hydrophobic layer is disposed on the first inorganic layer and located corresponding to the partition wall. An organic layer is disposed on the first inorganic layer and a portion of the hydrophobic layer, wherein the organic layer is disposed on an inner side of the partition wall adjacent to the display region. A second inorganic layer is disposed on the organic layer.

Abstract: A storage device includes a flash memory and a buffer memory. A method of controlling interrupts includes: receiving data to be written to the storage device from an information processing device; writing the received data to be written to the storage device to the buffer memory; fetching the data in the buffer memory and writing the data to the flash memory; in which, after writing the received data to be written to the storage device to the buffer memory, if the amount of data in the buffer memory is less than the predetermined threshold, then sending a message indicating the completion of the write operation to the information processing device.

Abstract: A method of controlling interrupts in the process of data transmission used for transmitting data between an information processing device and a storage device having a flash memory includes: receiving a write request sent by the information processing device using the storage device; in response to the write request, writing data to the flash memory; sending a message to the information processing device, to indicate completion of the write request, and calculating the number of times of sending messages to the information processing device within the predetermined time interval; in which, if the number is larger than the predetermined threshold, stopping the sending messages to the information processing device.

Abstract: A method of controlling interrupts in the process of data transmission used for transmitting data between an information processing device and a storage device having a flash memory includes: receiving a write request sent by the information processing device using the storage device; in response to the write request, writing data to the flash memory; sending a message to the information processing device, to indicate completion of the write request, and calculating the number of times of sending messages to the information processing device within the predetermined time interval; in which, if the number is larger than the predetermined threshold, stopping the sending messages to the information processing device.

Abstract: A storage device includes a flash memory and a buffer memory. A method of controlling interrupts includes: receiving data to be written to the storage device from an information processing device; writing the received data to be written to the storage device to the buffer memory; fetching the data in the buffer memory and writing the data to the flash memory; in which, after writing the received data to be written to the storage device to the buffer memory, if the amount of data in the buffer memory is less than the predetermined threshold, then sending a message indicating the completion of the write operation to the information processing device.