Abstract: The present disclosure relates to an automatic control system and method for water treatment of a thermal sterilization kettle. The system comprises a sampling module, a monitoring module and a control module, wherein the sampling module is used for respectively sampling hot water and cold water, and the monitoring module is arranged to respectively monitor online fluorescence signals in the sampled hot water and the sampled cold water; the control module is used for respectively controlling whether to add a compound medicament into a hot water area or not according to the online fluorescence signal of the sampled hot water and controlling whether to add the compound medicament into a cold water area or not according to the online fluorescence signal of the sampled cold water; and meanwhile, the monitoring module is further used for monitoring the residual chlorine signal of the sampled cold water.

Abstract: The present disclosure relates to an automatic control system and method for water treatment of a thermal sterilization kettle. The system comprises a sampling module, a monitoring module and a control module, wherein the sampling module is used for respectively sampling hot water and cold water, and the monitoring module is arranged to respectively monitor online fluorescence signals in the sampled hot water and the sampled cold water; the control module is used for respectively controlling whether to add a compound medicament into a hot water area or not according to the online fluorescence signal of the sampled hot water and controlling whether to add the compound medicament into a cold water area or not according to the online fluorescence signal of the sampled cold water; and meanwhile, the monitoring module is further used for monitoring the residual chlorine signal of the sampled cold water.

Abstract: The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N+ high-concentration substrate layer, an N? low-concentration Ga2O3 epitaxial layer and an anode metal layer from bottom to top, wherein the N? low-concentration Ga2O3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.

Abstract: The disclosure provides a calibration method, a system and a device of an on-wafer S parameter of a vector network analyzer. The method comprises the steps of: acquiring a first parameter of a first crosstalk calibration piece measured by the vector network analyzer; obtaining a main crosstalk error term based on the first parameter of the first crosstalk calibration piece and a calibration parameter of the first crosstalk calibration piece; acquiring a second parameter of a second crosstalk calibration piece measured by the vector network analyzer based on the main crosstalk error term; and obtaining a secondary crosstalk error term based on the second parameter of the second crosstalk calibration piece and a calibration parameter of the second crosstalk calibration piece, wherein the main crosstalk error term and the secondary crosstalk error term are used for calibrating the vector network analyzer.

Abstract: The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N+ high-concentration substrate layer, an N? low-concentration Ga2O3 epitaxial layer and an anode metal layer from bottom to top, wherein the N? low-concentration Ga2O3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.

Abstract: The disclosure provides a calibration method, a system and a device of an on-wafer S parameter of a vector network analyzer. The method comprises the steps of: acquiring a first parameter of a first crosstalk calibration piece measured by the vector network analyzer; obtaining a main crosstalk error term based on the first parameter of the first crosstalk calibration piece and a calibration parameter of the first crosstalk calibration piece; acquiring a second parameter of a second crosstalk calibration piece measured by the vector network analyzer based on the main crosstalk error term; and obtaining a secondary crosstalk error term based on the second parameter of the second crosstalk calibration piece and a calibration parameter of the second crosstalk calibration piece, wherein the main crosstalk error term and the secondary crosstalk error term are used for calibrating the vector network analyzer.