Abstract: According to an embodiment of the disclosed technology, a manufacture method of an organic thin film transistor array substrate is provided. The method comprises: forming a first pixel electrode, a source electrode, a drain electrode and a data line in a first patterning process; forming an organic semiconductor island and a gate insulating island in a second patterning process; forming a data pad region in a third patterning process; and forming a second pixel electrode, a gate electrode and a gate line in a fourth patterning process.

Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device.

Abstract: The present invention provides an array substrate and a method for manufacturing the same, and a display device. Wherein, after forming a pattern corresponding to a source/drain electrode layer, a transparent conducting layer is formed, and then a passivation layer is formed on the transparent conducting layer. Because the transparent conducting layer has a characteristic of anti-etching, it is hard to be damaged, so that the problem of damage of copper in the source/drain electrode layer is solved without increasing the process steps for forming the array substrate.

Abstract: The present invention relates to a wet start-up method for hydrogenation unit, an energy-saving hydrogenation process, and a hydrogenation apparatus. The method involves heating a start-up activating oil to a specific temperature and flowing the heated oil through a bed of hydrogenation catalyst bed, so that the temperature at the catalyst bed layer is increased to 180±10° C. or above by means of heat exchange and the reaction heat generated from activation in the start-up method.

Abstract: According to embodiments of the present invention, there are provided an organic semiconductor array substrate, a method for manufacturing the same and a display device. The organic thin film transistor array substrate comprises a pixel structure formed on a transparent substrate; the pixel structure includes: a gate line, a data line, an organic thin film transistor, a pixel electrode, a common electrode line and a common electrode; the organic thin film transistor includes a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode; above the data line, the source electrode, the drain electrode and the pixel electrode, there are disposed in order a first bank insulating layer and a second bank insulating layer from bottom to top; and at openings and through holes of the first bank insulating layer and the second bank insulating layer, the pixel structure is formed by printing.

Abstract: An apparatus for detection of integrated circuit recovery is disclosed. An example apparatus can comprise a first sensor embedded in an integrated circuit. The example apparatus can comprise a second sensor embedded in the integrated circuit. The example apparatus can comprise a selector unit configured to select one of the first sensor or the second sensor. The example apparatus can also comprise a monitor unit configured to receive output signal from the first sensor and the second sensor and to supply the output signal to an analysis unit.

Abstract: Systems and methods are provided for opening an unknown file. For example, whether a software matching with an unknown file is locally installed is detected; in response to the software being locally installed, the unknown file is opened using the installed software; and in response to the software not being locally installed, the software is downloaded and the unknown file is opened using the downloaded software.

Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.

Abstract: There is provided a thin film transistor, comprising a substrate (1) and a gate layer (3), a gate insulating layer (4), an active layer (5), an electrode metal layer (8) and a passivation layer (9) which are formed on the substrate (1) in sequence; the electrode metal layer (8) comprises a source electrode (8a) and a drain electrode (8b), which are separated from each other with a channel region being defined therebetween; between the gate layer (3) and the substrate (1), there is formed a first transparent conductive layer (2); between the active layer (5) and the electrode metal layer (8), there is formed a second transparent conductive layer (7). The transparent conductive layers (2, 7) are added so that adhesive force between the gate metal layer (3) and the substrate (1) is enhanced, diffusion of the electrode metal to the active layer (5) is prevented.

Abstract: According to embodiments of the present invention, there are provided an array substrate, a method for manufacturing the same and a display device, capable of reducing production difficulty of the array substrate. The manufacturing process of the array substrate is simplified, and the production cost is reduced. The array substrate comprises thin film transistor in a top-gate, bottom-contact configuration which is located on a substrate. Regarding the thin film transistor, its gate electrode is connected to a gate line, its source electrode is connected to a data line, and its drain electrode is connected to a pixel electrode.

Abstract: According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.

Abstract: There are provided an organic thin film transistor array substrate and a method for manufacturing the same which increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pattern layer of pixel electrode, and a pattern layer of source electrode and data line and a pattern layer of drain electrode, which are located above the pattern layer of pixel electrode, are formed on a substrate through one patterning process; an organic semiconductor layer that covers the pattern layer of source electrode and data line and the pattern layer of drain electrode and a gate insulating layer that covers the organic semiconductor layer are formed through one patterning process; and a pattern layer of gate electrode and gate line is formed through one patterning process on the substrate formed with the gate insulating layer.

Abstract: According to embodiments of the present invention, there are disclosed an organic thin film transistor (OTFT) array substrate, a display device and a method for manufacturing the same, which are capable of improving quality of a channel. The OTFT array substrate comprises: a transparent substrate, a gate line and a data line which are formed on the transparent substrate, and a pixel unit which are defined by crossing of the gate line and the data line; the pixel unit including an organic thin film transistor (OTFT) and a pixel electrode; on a channel region of an active layer of the OTFT, there is provided a first passivation layer unit.

Abstract: According to the present invention, there is provided an organic thin film transistor array substrate and a method for manufacturing the same and a display device.

Abstract: Aspects of the disclosure relate to combining on-chip structure with external current measurements for threat detection in an integrated circuit. This method considers Trojans' impact on neighboring cells and on the entire IC's power consumption, and effectively localizes the measurement of dynamic power. An on-chip structure can permit threat detections. In one aspect, the on-chip structure can comprise a plurality of sensors distributed across the entirety of the IC, with each sensor of the plurality of sensors being placed in different rows of a standard-cell design. In another aspect, data analysis can permit separating effect of process variations on transient power usage of the IC from effects of a hardware threat such power usage. The on-chip structure also can be employed for implementation of a PE-PUF.

Abstract: According to an embodiment of the disclosed technology, a manufacture method of an organic thin film transistor array substrate is provided. The method comprises: forming a first pixel electrode, a source electrode, a drain electrode and a data line in a first patterning process; forming an organic semiconductor island and a gate insulating island in a second patterning process; forming a data pad region in a third patterning process; and forming a second pixel electrode, a gate electrode and a gate line in a fourth patterning process.