Abstract: An entity recognition method, a model training method, an electronic device, and a medium, which relate to fields of artificial intelligence, information acquiring technologies. The entity recognition method includes: extracting specified entities from a text in a source file of a webpage to be recognized, and acquiring a text encoding result for each specified entity; determining a text block formed by each specified entity in the webpage, and encoding a relative layout information between each two text blocks, to obtain a position encoding result; constructing a triple by the position encoding result for each two text blocks and the text encoding results for respective specified entities of the two text blocks; and performing a graph convolution on each triple to obtain a relation recognition result for the webpage to be recognized, where the relation recognition result indicates whether an association exists between each two text blocks in the webpage.

Abstract: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.

Abstract: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.