Patents by Inventor Xuejiao Lin

Xuejiao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical light-emitting diode
    Patent number: 8653555
    Abstract: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: February 18, 2014
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Xuejiao Lin, Huijun Huang
  • Antistatic gallium nitride based light emitting device and method for fabricating the same
    Patent number: 8217417
    Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: July 10, 2012
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Qunfeng Pan, Xuejiao Lin, Jyh Chiarng Wu
  • VERTICAL LIGHT-EMITTING DIODE
    Publication number: 20110303895
    Abstract: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer.
    Type: Application
    Filed: June 9, 2011
    Publication date: December 15, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xuejiao LIN, Huijun HUANG
  • Method for manufacturing GaN-based film LED
    Patent number: 7955959
    Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: June 7, 2011
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Jyh Chiarng Wu, Xuejiao Lin, Qunfeng Pan, Meng Hsin Yeh, Huijun Huang
  • METHOD FOR MANUFACTURING GaN-BASED FILM LED
    Publication number: 20110076791
    Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.
    Type: Application
    Filed: September 23, 2010
    Publication date: March 31, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jyh Chiarng WU, Xuejiao LIN, Qunfeng PAN, Meng Hsin YEH, Huijun HUANG
  • Antistatic Gallium Nitride Based Light Emitting Device and Method for Fabricating the Same
    Publication number: 20110057199
    Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.
    Type: Application
    Filed: September 7, 2010
    Publication date: March 10, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Qunfeng PAN, Xuejiao LIN, Jyh Chiarng WU