Abstract: A method reduces noise resulting from a current surge in a circuit. A plurality of loading elements, parallel with the circuit being protected, are connected sequentially and disconnected. The connection of the loading elements results in a ramping up of current through the circuit without a sudden surge. In a preferred embodiment, an apparatus for slowing a current change in a circuit is described. The apparatus comprises a plurality of loading elements placed in parallel with the circuit, each of the elements providing a path for current flow, and a control circuit for selectively opening or closing at least one of said paths to prevent or enable current flow through the at least one of the paths.

Abstract: A method reduces noise resulting from a current surge in a circuit. A plurality of loading elements, parallel with the circuit being protected, are connected sequentially and disconnected. The connection of the loading elements results in a ramping up of current through the circuit without a sudden surge. In a preferred embodiment, an apparatus for slowing a current change in a circuit is described. The apparatus comprises a plurality of loading elements placed in parallel with the circuit, each of the elements providing a path for current flow, and a control circuit for selectively opening or closing at least one of said paths to prevent or enable current flow through the at least one of the paths.

Abstract: A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.