Patents by Inventor Xuejun (Andy) Zhang

Xuejun (Andy) Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040232991
    Abstract: Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
    Type: Application
    Filed: May 23, 2003
    Publication date: November 25, 2004
    Inventors: Jianjun Zhou, Xuejun Andy Zhang
  • Patent number: 6819183
    Abstract: Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: November 16, 2004
    Assignee: Qualcomm, Incorporated
    Inventors: Jianjun Zhou, Xuejun (Andy) Zhang