Patents by Inventor Xuejun Ying
Xuejun Ying has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240317832Abstract: An unnatural amino acid may have a structure as shown in formula (1) or may be an enantiomer thereof: Such unnatural amino acid may be used, e.g., in recombinant proteins. A recombinant protein may contain such unnatural amino acid and a protein conjugate prepared from the recombinant protein. The unnatural amino acid can be simple and convenient to prepare, safe in nature, difficult to inactivate when inserted into a protein, and may have a high binding rate with a coupling moiety, and the obtained conjugate is higher in stability. The unnatural amino acid is applicable to numerous fields, especially in preparation of a recombinant protein or a recombinant protein conjugate.Type: ApplicationFiled: July 29, 2021Publication date: September 26, 2024Applicant: NOVOCODEX BIOPHARMACEUTICALS CO., LTD.Inventors: Jinwei YANG, Chenghao YE, Gang XIA, Pengchao HUO, Wen DING, Longfei CHEN, Lin JIAO, Hao HUANG, Xin HENG, Jingjing ZHU, Yuebin YING, Xuejun LIANG
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Publication number: 20240245609Abstract: The present invention provides a freeze-dried composition containing anti-HER2 drug conjugate, which comprises ARX788 and one or more of pharmaceutically acceptable lyoprotectant, buffer salts and surfactants, wherein the pH value of the freeze-dried composition is from 5.7 to 6.3. The present invention also provides a freeze-dried preparation containing anti-HER2 drug conjugate and the preparation method thereof. The present invention also provides use of the freeze-dried composition and the freeze-dried preparation. The freeze-dried composition and the freeze-dried preparation provided by the present invention have a very excellent stability, as well as good appearance, short reconstitution time and low moisture content. The product quality is safe and reliable, and the production efficiency is high.Type: ApplicationFiled: July 20, 2021Publication date: July 25, 2024Applicant: NOVOCODEX BIOPHARMACEUTICALS CO., LTD.Inventors: Lihai XIAO, Jiali CHEN, Moutian YE, Gang XIA, Jingjing ZHU, Lei FANG, Yuebin YING, Luxiong YE, Xuejun LIANG
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Patent number: 9659900Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a semiconductor wafer and an integrated circuit die bonded together with an adhesive material. The semiconductor wafer and the integrated circuit die include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the semiconductor wafer and an integrated circuit die. A via is formed through the semiconductor wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the semiconductor wafer and the integrated circuits formed in the integrated circuit die. The via includes a conductive material that furnishes the electrical interconnection between the semiconductor wafer and the integrated circuit die.Type: GrantFiled: November 23, 2015Date of Patent: May 23, 2017Assignee: Maxim Intergrated Products, Inc.Inventors: Xuejun Ying, Arkadii V. Samoilov, Peter McNally, Tyler Parent
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Patent number: 9331048Abstract: A method including: providing a first wafer stack; applying a first bonding layer on the first wafer stack; providing a second wafer stack, where the second wafer stack includes vias; and applying a second bonding layer to the second wafer stack. The vias extend through the second wafer stack and to the second bonding layer. The second bonding layer is bonded to the first bonding layer. A seed layer is applied on a side of the second wafer stack opposite the second bonding layer such that a material of the seed layer (i) contacts the vias, and (ii) extends over and past ends of the second wafer stack and onto the first bonding layer.Type: GrantFiled: January 26, 2015Date of Patent: May 3, 2016Assignee: Maxim Integrated Products, Inc.Inventors: Quanbo Zou, Uppili Sridhar, Amit S. Kelkar, Xuejun Ying
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Publication number: 20160079197Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a semiconductor wafer and an integrated circuit die bonded together with an adhesive material. The semiconductor wafer and the integrated circuit die include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the semiconductor wafer and an integrated circuit die. A via is formed through the semiconductor wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the semiconductor wafer and the integrated circuits formed in the integrated circuit die. The via includes a conductive material that furnishes the electrical interconnection between the semiconductor wafer and the integrated circuit die.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Inventors: Xuejun Ying, Arkadii V. Samoilov, Peter McNally, Tyler Parent
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Patent number: 9196587Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a semiconductor wafer and an integrated circuit die bonded together with an adhesive material. The semiconductor wafer and the integrated circuit die include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the semiconductor wafer and an integrated circuit die. A via is formed through the semiconductor wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the semiconductor wafer and the integrated circuits formed in the integrated circuit die. The via includes a conductive material that furnishes the electrical interconnection between the semiconductor wafer and the integrated circuit die.Type: GrantFiled: June 28, 2013Date of Patent: November 24, 2015Assignee: Maxim Integrated Products, Inc.Inventors: Xuejun Ying, Arkadii V. Samoilov, Peter McNally, Tyler Parent
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Patent number: 9105750Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.Type: GrantFiled: June 2, 2014Date of Patent: August 11, 2015Assignee: Maxim Integrated Products, Inc.Inventors: Arkadii V. Samoilov, Tyler Parent, Xuejun Ying
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Patent number: 9040386Abstract: A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.Type: GrantFiled: December 27, 2013Date of Patent: May 26, 2015Assignee: Maxim Integrated Products, Inc.Inventors: Xuejun Ying, Li Li, Amit S. Kelkar, Brian S. Poarch
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Publication number: 20150132891Abstract: A method including: providing a first wafer stack; applying a first bonding layer on the first wafer stack; providing a second wafer stack, where the second wafer stack includes vias; and applying a second bonding layer to the second wafer stack. The vias extend through the second wafer stack and to the second bonding layer. The second bonding layer is bonded to the first bonding layer. A seed layer is applied on a side of the second wafer stack opposite the second bonding layer such that a material of the seed layer (i) contacts the vias, and (ii) extends over and past ends of the second wafer stack and onto the first bonding layer.Type: ApplicationFiled: January 26, 2015Publication date: May 14, 2015Inventors: Quanbo Zou, Uppili Sridhar, Amit S. Kelkar, Xuejun Ying
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Patent number: 8970043Abstract: A wafer structure includes a first wafer stack and a first bonding layer disposed on the first wafer stack. The wafer structure further includes a second wafer stack that includes a first surface and a second surface opposing the first surface. A second bonding layer is disposed on the second surface and is in contact with the first bonding layer. The second wafer stack comprises through-silicon-vias (TSVs) that extend from the first surface to the second bonding layer. A seed layer is disposed on the first surface and is in contact with the TSVs.Type: GrantFiled: February 1, 2011Date of Patent: March 3, 2015Assignee: Maxim Integrated Products, Inc.Inventors: Quanbo Zou, Uppili Sridhar, Amit S. Kelkar, Xuejun Ying
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Patent number: 8963287Abstract: A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.Type: GrantFiled: June 25, 2013Date of Patent: February 24, 2015Assignee: Maxim Integrated Products, Inc.Inventors: Lei Tian, Scott W. Barry, Xuejun Ying
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Publication number: 20150028455Abstract: A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.Type: ApplicationFiled: December 27, 2013Publication date: January 29, 2015Applicant: Maxim Integrated Products, Inc.Inventors: Xuejun Ying, Li Li, Amit S. Kelkar, Brian S. Poarch
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Publication number: 20140264844Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a semiconductor wafer and an integrated circuit die bonded together with an adhesive material. The semiconductor wafer and the integrated circuit die include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the semiconductor wafer and an integrated circuit die. A via is formed through the semiconductor wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the semiconductor wafer and the integrated circuits formed in the integrated circuit die. The via includes a conductive material that furnishes the electrical interconnection between the semiconductor wafer and the integrated circuit die.Type: ApplicationFiled: June 28, 2013Publication date: September 18, 2014Inventors: Xuejun Ying, Arkadii V. Samoilov, Peter McNally, Tyler Parent
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Patent number: 8742574Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.Type: GrantFiled: August 9, 2011Date of Patent: June 3, 2014Assignee: Maxim Integrated Products, Inc.Inventors: Arkadii V. Samoilov, Tyler Parent, Xuejun Ying
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Patent number: 8487405Abstract: A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.Type: GrantFiled: February 17, 2011Date of Patent: July 16, 2013Assignee: Maxim Integrated Products, Inc.Inventors: Lei Tian, Scott Wilson Barry, Xuejun Ying
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Publication number: 20130037948Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.Type: ApplicationFiled: August 9, 2011Publication date: February 14, 2013Applicant: Maxim Integrated Products, Inc.Inventors: Arkadii V. Samoilov, Tyler Parent, Xuejun Ying
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Publication number: 20120211865Abstract: A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.Type: ApplicationFiled: February 17, 2011Publication date: August 23, 2012Applicant: MAXIM INTEGRATED PRODUCTS, INC.Inventors: LEI TIAN, SCOTT WILSON BARRY, XUEJUN YING
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Publication number: 20120193808Abstract: A wafer structure includes a first wafer stack and a first bonding layer disposed on the first wafer stack. The wafer structure further includes a second wafer stack that includes a first surface and a second surface opposing the first surface. A second bonding layer is disposed on the second surface and is in contact with the first bonding layer. The second wafer stack comprises through-silicon-vias (TSVs) that extend from the first surface to the second bonding layer. A seed layer is disposed on the first surface and is in contact with the TSVs.Type: ApplicationFiled: February 1, 2011Publication date: August 2, 2012Applicant: Maxim Integrated Products, Inc.Inventors: Quanbo Zou, Uppili Sridhar, Amit S. Kelkar, Xuejun Ying
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Publication number: 20120194306Abstract: A micro relay of a micro-electro-mechanical system (MEMS), includes a cap substrate, a first electrical contact, an actuator, and a second electrical contact. The first electrical contact is formed on the cap substrate, includes a platinum group metal, and includes a first surface layer of an oxide of the platinum group metal. The second electrical contact is formed on the actuator, includes the platinum group metal, and includes a second surface layer of the oxide of the platinum group metal. At least a first portion of the first surface layer contacts at least a second portion of the second surface layer during cycling of the micro relay.Type: ApplicationFiled: February 1, 2011Publication date: August 2, 2012Applicant: Maxim Integrated Products, Inc.Inventors: Uppili Sridhar, Quanbo Zou, Amit S. Kelkar, Xuejun Ying
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Patent number: D985999Type: GrantFiled: January 23, 2021Date of Patent: May 16, 2023Inventor: Xuejun Ying