Abstract: An intelligent oil extraction system using an all-metal screw pump includes: the all-metal screw pump, an oil collecting unit (43), and a steam generating unit (45); wherein an internal threaded curve surface and an external threaded curve surface of the all-metal screw pump are both tapered spiral structures with equal tapers; the oil extraction system comprises a lifting mechanism and monitoring and control mechanism; the monitoring and control mechanism comprises: a controller (34), a torque sensor (35), a flow sensor (36), a pressure sensor (39), a liquid level detector (38), and a backup power source (37); the controller (34) is electrically connected to the torque sensor (35), the flow sensor (36), the pressure sensor (39), the liquid level detector (38), the backup power source (37), a drive motor (48), a servo motor (33), a first valve and a second valve.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Abstract: A thin film transistor, a manufacturing method thereof, and an electronic device are provided. The thin film transistor comprises a passivation layer disposed on the active layer, wherein a step of forming the passivation layer includes forming an insulating first metal oxide layer, the first metal oxide layer being capable of moving a Fermi level of the active layer to a side of a forbidden band to a valence band.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Abstract: The present disclosure provides a thin film transistor and an array substrate. The thin film transistor includes a source, a drain, and an active layer, and the thin film transistor further includes a blocking layer between the active layer and the source and/or the drain. The present disclosure can reduce the off-state current of the thin film transistor and suppress the bipolar effect.

Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

Abstract: The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

Abstract: The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Abstract: The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

Abstract: The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Abstract: The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

Abstract: A carbon nano-tube based photoelectric device includes a substrate and a carbon nanotube (CNT) over the substrate. The CNT comprises a first end and a second end, wherein the CNT has a CNT work function. A high work-function electrode over the substrate is in electric contact with the first end of the CNT. The high work-function electrode has a first work function higher than the CNT work function. A low work-function electrode over the substrate is in electric contact with the second end of the CNT. The low work-function electrode has a second work function lower than the CNT work function. The CNT can form a conductive channel between the high work-function electrode and the low work-function electrode. The carbon nano-tube based photoelectric device also includes a dielectric material is in contact with a side surface of the CNT and a conductive material in contact with the dielectric material.

Abstract: Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom.

Abstract: Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom.

Abstract: A carbon nano-tube based photoelectric device includes a substrate and a carbon nanotube (CNT) over the substrate. The CNT comprises a first end and a second end, wherein the CNT has a CNT work function. A high work-function electrode over the substrate is in electric contact with the first end of the CNT. The high work-function electrode has a first work function higher than the CNT work function. A low work-function electrode over the substrate is in electric contact with the second end of the CNT. The low work-function electrode has a second work function lower than the CNT work function. The CNT can form a conductive channel between the high work-function electrode and the low work-function electrode. The carbon nano-tube based photoelectric device also includes a dielectric material is in contact with a side surface of the CNT and a conductive material in contact with the dielectric material.