Abstract: A method for preparing a GaN substrate material includes: performing in-situ epitaxy on a Ga2O3 thin film and a GaN thin film in a multifunctional HVPE growth system. First, the Ga2O3 thin film is grown on a substrate such as sapphire by an HVPE-like method, and the Ga2O3 is nitrided in an ammonia gas atmosphere to form a GaN/Ga2O3 composite thin film. Then, a GaN thick film is grown on the GaN/Ga2O3 composite thin film by HVPE to obtain a high-quality GaN thick film material. The Ga2O3 layer is removed by chemical etching to obtain a self-supporting GaN substrate material. Or, the conventional laser lift-off method is used to separate the GaN thick film from the heterogeneous substrate such as the sapphire to obtain a GaN self-supporting substrate material.

Abstract: A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.

Abstract: A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.

Abstract: This invention presents a growth method for GaN based quantum wells red light LED structure by MOCVD epitaxy growth system, GaN based GaN/InGaN quantum wells red light LED structure material is obtained. The In mole fraction (x) for quantum well material InGaN is controlled between 0.1 and 0.5. This invention realizes the lumiscience of long wave length red light in group III nitrides. Aiming at the problem of difficulty in growing high In composition InGaN material, this invention solves this problem by controlling and adjusting the flux of organic Ga source and In source, growth temperature, time, and the flux of ammonia, and the mole ratio of N to Ga. By strictly controlling the conditions such as temperature and the flux ratio of reactant in the whole process, this invention determines the radiation wave length of quantum well, realizes the lumiscience of long wave length, and obtained GaN based GaN/InGaN quantum well red light LED structure.

Abstract: A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in InxGa1?xN. The invention synthetically grows m-plane InN and In-rich m-plane InGaN using LiA1O2 (100) as substrate which will be disposed and the buffer by MOCVD. And the non-polarized-plane InN would be produced through choosing appropriate substrate and the technique condition of growth as well as using the design of buffer by MOCVD.